Allicdata Part #: | NVMFS6B05NWFT1G-ND |
Manufacturer Part#: |
NVMFS6B05NWFT1G |
Price: | $ 1.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 104A SO8FL |
More Detail: | N-Channel 100V 3.8W (Ta), 165W (Tc) Surface Mount... |
DataSheet: | NVMFS6B05NWFT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 1.59550 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 3100pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3.8W (Ta), 165W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
Description
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.NVMFS6B05NWFT1G Application Field and Working Principle
NVMFS6B05NWFT1G is a single, high performance and low on-resistance N-channel MOSFET designed for Power Switching in applications such as Lighting, Power Management and Motor Control. The device has an integrated N-channel MOSFET with a driver which allows for a low voltage and low power operation.
The NVMFS6B05NWFT1G has an on-resistance of 0.45 Ohm and is commonly used in lighting applications. It is also commonly used in power management to regulate power supply between different loads. This device can be used to switch and regulate power in motor control applications, such as motor drivers and speed controllers.
The NVMFS6B05NWFT1G has a threshold voltage of 4V which allows for lower power operation. It has a maximum current rating of 30A, making it suitable for high current applications. The device is also capable of operating at frequencies up to 500KHz, making it a great choice for high frequency applications.
The NVMFS6B05NWFT1G is capable of operating in a wide range of temperatures up to 150°C. It also has an operating temperature range of -55°C to 150°C, making it suitable for extreme temperature conditions. The device also has built-in over voltage protection and short-circuit protection, making it suitable for use in high-power applications.
The working principle of the NVMFS6B05NWFT1G is based on the MOSFET structure. It is based on an insulated gate field-effect transistor (IGFET) with an on-resistance of 0.45 Ohm and a threshold voltage of 4V. The on-resistance and threshold voltage allow for the device to be driven by a low voltage and draw low power.
The device also has an integrated driver which allows for the device to be driven with a low voltage and low power operation. The driver acts as a buffer between the gate and source of the device and controls the voltage on the gate of the MOSFET which allows for a low power and low voltage operation. This allows for the device to be operated with a low voltage and high current.
The NVMFS6B05NWFT1G is a single, high performance and low on-resistance N-channel MOSFET designed for power switching in applications such as lighting, power management and motor control. The device has an on-resistance of 0.45 Ohm, a threshold voltage of 4V, a maximum current rating of 30A, and a frequency capability up to 500KHz. The device is also capable of operating in a wide range of temperatures up to 150°C and has built-in overvoltage and short-circuit protection. The working principle of the device is based on the MOSFET structure and is driven by an integrated driver which allows for low voltage and low power operation.
The specific data is subject to PDF, and the above content is for reference
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