Allicdata Part #: | NVMFS5C426NWFT3G-ND |
Manufacturer Part#: |
NVMFS5C426NWFT3G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 40V SO8FL |
More Detail: | N-Channel 40V 3.8W (Ta), 128W (Tc) Surface Mount ... |
DataSheet: | NVMFS5C426NWFT3G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 128W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.3 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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The NVMFS5C426NWFT3G is a type of transistor used in a variety of different contexts. It falls under the category of field effect transistors (FETs) and is a single MOSFET (metal-oxide-semiconductor field effect transistor). It has become increasingly popular in the electronics industry due to its range of features and relative low cost.
The application field of the NVMFS5C426NWFT3G is vast, allowing it to be used in a variety of control and switching elements. These include high-voltage and high-power applications such as motor control, power converters, industrial I/O circuits, and other high-power switching devices. It is also used in audio and television power amplifiers, delay circuits, and other audio processing devices. In medical electronics, this type of transistor is used for medical imaging and other medical applications. Finally, it is used frequently in the telecommunications industry for high-frequency amplifiers, video line amplifiers, and other signal processing components.
The NVMFS5C426NWFT3G is a particularly robust device due to its level-shift input feature. This feature lengthens the circuit response time, allowing the device to switch faster before destruction takes place. This makes the NVMFS5C426NWFT3G particularly suitable for use in high-performance applications. In addition, it has a wide variety of package options to provide customers with the best size and style for their needs.
The working principle behind the NVMFS5C426NWFT3G is simple. It is a three-terminal device, with source (S), gate (G), and drain (D). When a voltage is applied to the gate (G), it creates an electric field which attracts electrons from the source and pulls them through to the drain. This is known as the ‘field effect’ of the device, and it is responsible for controlling the current flowing through the transistor. As the gate voltage is increased, more electrons are attracted and the flow of current is increased.
The NVMFS5C426NWFT3G also features protection mechanisms such as reverse blocking protection, VIRF protection and avalanche protection. This type of protection allows the device to work safely and reliably in a variety of environments. The reverse blocking protection prevents reverse current between the source and the drain. The VIRF protection prevents the device from overheating, while avalanche protection prevents it from breaking down in high-voltage situations.
In summary, the NVMFS5C426NWFT3G is an FET/MOSFET device with a wide range of applications. It is used in a variety of control and switching elements, including high-voltage and high-power applications. It also has several protection mechanisms in place, making it suitable for use in a wide range of environments. Its robust design ensures that it has a long lasting life and can be relied upon for reliable performance over time.
The specific data is subject to PDF, and the above content is for reference
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