Allicdata Part #: | NVMFS6B75NLT1G-ND |
Manufacturer Part#: |
NVMFS6B75NLT1G |
Price: | $ 0.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 7A 28A 5DFN |
More Detail: | N-Channel 100V 7A (Ta), 28A (Tc) 3.5W (Ta), 56W (T... |
DataSheet: | NVMFS6B75NLT1G Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.30806 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN, 5 Leads |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.5W (Ta), 56W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 10V |
Series: | Automotive, AEC-Q101 |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Ta), 28A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The NVMFS6B75NLT1G is a type of transistor, specifically a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It is a single transistor, meaning that it is only composed of one active element, and is usually used in an analog circuit as either an amplifier or a switch. The NVMFS6B75NLT1G is a power MOSFET, meaning it is designed to handle higher voltages and currents than a standard MOSFET. The device is manufactured by ON Semiconductor and has a drain-source voltage of 75 volts and a drain current of 60 Amps.
The NVMFS6B75NLT1G is commonly used in power management applications, such as battery charging, switched mode power supplies (SMPS), dc-dc converters, and motor control systems. It is also used in consumer electronics, such as laptop computers, smart phones and tablets. The transistors are rated to handle up to 300V of drain-source voltage and have a high maximum operating temperature of +150°C, making them suitable for use in harsh environmental conditions.
In terms of working principle, the NVMFS6B75NLT1G utilizes the MOSFET technology. A MOSFET is a type of solid-state device that consists of a metal-oxide-semiconductor layer between two electrodes and is used for amplifying or switching electronic signals. The NVMFS6B75NLT1G works by regulating current flow between the source and drain terminals by using a small electric field.
The NVMFS6B75NLT1G and other MOSFETs are ideal for use in applications that require low input power, high speed operation, and low on-resistance. They are also preferred for their low switching losses and maintenance-free performance. The NVMFS6B75NLT1G is particularly useful for switching higher loads in hard drives and power tool applications.
In summary, the NVMFS6B75NLT1G is a single power MOSFET transistor, with a drain-source voltage of 75 volts and current of 60 Amps. It is used in numerous power management applications, ranging from battery charging and switched mode power supplies to motor control systems. Working principle of the NVMFS6B75NLT1G utilizes the MOSFET technology and it is particularly effective for applications requiring low input power, high speed operation and low on-resistance.
The specific data is subject to PDF, and the above content is for reference
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