Allicdata Part #: | NVMFS6B03NT3G-ND |
Manufacturer Part#: |
NVMFS6B03NT3G |
Price: | $ 2.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 132A SO8FL |
More Detail: | N-Channel 100V 3.9W (Ta), 198W (Tc) Surface Mount... |
DataSheet: | NVMFS6B03NT3G Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 2.03454 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.8 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Vgs (Max): | ±16V |
Input Capacitance (Ciss) (Max) @ Vds: | 4200pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 3.9W (Ta), 198W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
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The NVMFS6B03NT3G is a single MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is widely used in switching applications. It is a low cost device with a very small outline, making it suitable for many consumer products. With its low gate threshold voltage and high current ratings, it is an ideal solution for reliable, high-speed switching.
The NVMFS6B03NT3G is a n-channel enhancement mode MOSFET that is designed to provide low on-resistance. This MOSFET can be used with voltages up to 60V and currents up to 3A. It is a very versatile device that can be used in a wide variety of applications ranging from automotive and industrial to consumer electronics. The NVMFS6B03NT3G is specifically designed for low-loss switching in power applications but can also be used in signal switching applications. The MOSFET is also ESD protected and has a low gate drive requirement.
In terms of its application field, the NVMFS6B03NT3G can be used as a switching device in power supplies, motor control applications, load switches, and system power supply/sequencing. It is well suited for use in power converters, DC/DC converters, DC/AC inverters, and motor control circuits. In addition to these, the NVMFS6B03NT3G can be used in audio power amplifiers, power management systems, voltage regulators, and logic level shifting applications. The device is also ideal for use in battery chargers, power supplies, and power control circuits.
The NVMFS6B03NT3G works by applying a voltage to the gate. This activates the MOSFET, allowing current to flow between the source and the drain. The current flow is determined by the voltage applied to the gate, the drain-source voltage, and the temperature. The MOSFET can be used in either enhancement or depletion mode. In enhancement mode, the MOSFET can be used as a transistor switch, allowing the output voltage to be adjusted by the gate voltage. In depletion mode, the MOSFET behaves like a resistor and can be used to control current through the drain by changing the gate voltage. In either mode, the MOSFET can be used to control the amount of current flowing through the device, making it an ideal choice for many applications.
In conclusion, the NVMFS6B03NT3G is an n-channel enhancement mode MOSFET that is designed to provide low on-resistance. It can be used in a wide variety of applications, including power converters, DC/DC converters, DC/AC inverters, motor control circuits, and audio power amplifiers. Its low gate threshold voltage and high current ratings make it an ideal solution for high-speed switching. In terms of application field and working principle, the NVMFS6B03NT3G is a versatile MOSFET that is suitable for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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