NVMFS6B75NLWFT1G

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-PowerTDFN, 5 Leads
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.5W (Ta), 56W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	740pF @ 25V
Vgs (Max):	±16V
Gate Charge (Qg) (Max) @ Vgs:	11.3nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	30 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	7A (Ta), 28A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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NVMFS6B75NLWFT1G is a field-effect transistor (FET) that belongs to the group of single MOSFETs. It is used extensively in high power applications requiring high switching speed and low on-state resistance. NVMFS6B75NLWFT1G has a wide reverse drain-to-source voltage (VDS) range, from 200V to 800V, and can withstand up to 30A drain current (ID) in both ohmic and linear modes.NVMFS6B75NLWFT1G is an enhancement-mode MOSFET, which means that it requires a gate-to-source voltage (VGS) at a higher potential than the source pin in order to conduct current. This device features a low gate threshold voltage of 2V, which makes it ideal for high speed switching applications. The device also has a high maximum drain-to-source breakdown voltage (BVDSS) rating of 800V, allowing it to withstand higher voltages without undergoing damage.NVMFS6B75NLWFT1G has gained popularity due to its excellent switching performance, low reverse leakage current and high power capability. In addition, its temperature coefficient of on-state resistance (RDS(ON)) is relatively low, making it applicable for modern power systems with changing temperature ranges. With its excellent electrical characteristics, NVMFS6B75NLWFT1G is suitable for applications that require both high power and fast switching performance, such as high current inverters, battery charging systems and power supplies.NVMFS6B75NLWFT1G is typically used in applications that require a higher level of efficiency and power handling. Applications include motor drive systems, HVAC systems, automotive electronics, robotic motion control, and any application requiring high power operation.The working principle of NVMFS6B75NLWFT1G involves the application of a gate voltage (VGS) at the gate terminal that controls the amount of electrons that can move through the channel. When the gate voltage is low, the current flowing through the channel is low. When the gate voltage is high, the current flowing through the channel increases, thereby amplifying the voltage difference between the source and drain. In addition, the high gate voltage allows for faster switching speeds, which makes NVMFS6B75NLWFT1G an excellent choice for high speed applications.Overall, NVMFS6B75NLWFT1G is a single MOSFET suitable for high power applications. It features a high drain-to-source breakdown voltage, a low gate threshold voltage, and a low temperature coefficient of on-state resistance. Due to its excellent switching performance, low reverse leakage current and high power capability, NVMFS6B75NLWFT1G is used in a wide range of applications allowing it to provide efficient power operation and fast switching speeds.

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