Allicdata Part #: | 568-5591-2-ND |
Manufacturer Part#: |
PSMN3R5-30LL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V QFN3333 |
More Detail: | N-Channel 30V 40A (Tc) 71W (Tc) Surface Mount 8-DF... |
DataSheet: | PSMN3R5-30LL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN3333 (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 71W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2061pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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PSMN3R5-30LL,115 is a single-channel N-channel MOSFET (metal–oxide–semiconductor field-effect transistor) that is designed to provide the high level of efficiency and long-term stability for a wide range of applications. Commonly used in power switching, PSMN3R5-30LL,115 is suitable for any application that requires high current switching capability in a small package.
A MOSFET is an electronic switch that controls the flow of electricity through a semiconductor material. It is the basic building block of most transistor-based technology, including analog and digital electronics. In the case of PSMN3R5-30LL,115, the semiconductor material is a silicon wafer, and the “gate” is an N-Channel MOSFET. The main purpose of the gate is to control the current that can flow through the channel, and hence, control the power input.
When voltage is applied to the gate, it allows current to flow from the source to the drain, thereby switching the device on. When the gate voltage is increased, the current is allowed to flow more freely, allowing more power to be delivered. Conversely, when the gate voltage is lowered, the current is restricted and allows less power to flow. This allows the user to tailor the power and efficiency of their application.
PSMN3R5-30LL,115 is suitable for many different applications, such as automotive and power switching, since it provides a high level of efficiency and long-term stability. It is also capable of withstanding high voltage and high temperature applications, making it a versatile and reliable choice. It can be used in many different types of electronics, from amplifiers and power regulators to solar cells and LED drivers. Moreover, it is relatively easy to use and has a long life span.
In conclusion, PSMN3R5-30LL,115 is a single-channel N-channel MOSFET that is designed for a wide range of applications. Thanks to its high level of efficiency and long-term stability, PSMN3R5-30LL,115 is ideal for any application that requires high current switching capability in a small package. Whether your application is automotive or power switching, this device can meet your needs. It is versatile, reliable, and easy to use, making it an ideal choice for any electronics application.
The specific data is subject to PDF, and the above content is for reference
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