PSMN3R7-30YLC,115

Vgs(th) (Max) @ Id:	1.95V @ 1mA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	79W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1848pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3.95 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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PSMN3R7-30YLC,115 Application Field and Working PrincipleThe PSMN3R7-30YLC,115 MOSFET is a popular type of transistor that has a wide range of applications. This type of transistor is designed for use in electronics applications such as power switches, motor controls, and semiconductor logic circuits. It is a high-performance metal-oxide-semiconductor field-effect transistor (MOSFET). The MOSFET is a three-terminal unipolar device. It can be used as a switch and a variable resistor in order to control the current flow in circuits. The device consists of a N-type source region, a P-type drain region, and a gate layer. The gate layer is electrically insulated from the source and drain so that no electricity can pass through the transistor. When a voltage is applied to the gate, it forms an electrostatic field between the source and drain terminals, letting current flow from the source to the drain. This process is called the "ON" state. When the applied voltage is removed from the gate, the electrostatic field is removed, preventing current from flowing. This process is known as the "OFF" state.The purpose of the P-type drain is to provide a path for the flow of electrons, while the N-type source produces a surplus of electrons in order to supply them to the drain. The two regions are separated by an insulator, which is also known as the gate oxide. The gate oxide is a thin layer of dielectric, typically made of silicon dioxide (SiO₂), that protects the components of the MOSFET from damage due to electrical shock. In the ON state, when a positive gate voltage is applied, current can flow through the source-drain channel due to the presence of an electrical field. This is known as "inversion". When the gate voltage is reduced or removed, the channel is no longer able to conduct current due to the absence of electrical field. The PSMN3R7-30YLC,115 MOSFET is capable of handling up to 30 watts of power and has a breakdown voltage of 115 volts. It has an exceptionally low gate capacitance of less than 50 picofarads, allowing for high switching speeds with minimum power losses. Moreover, its small size and low weight makes it ideal for use in space-constrained applications. Overall, the PSMN3R7-30YLC,115 MOSFET is a versatile and robust type of transistor. It is suitable for a wide range of electronics applications and offers excellent performance and reliability. The device is able to handle high levels of power without electrical breakdowns and its small size makes it ideal for use in space-constrained applications.

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