Allicdata Part #: | 568-5592-2-ND |
Manufacturer Part#: |
PSMN3R8-30LL,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 30V QFN3333 |
More Detail: | N-Channel 30V 40A (Tc) 69W (Tc) Surface Mount 8-DF... |
DataSheet: | PSMN3R8-30LL,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.15V @ 1mA |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN3333 (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 69W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2085pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3.7 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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A PSMN3R8-30LL,115 transistor is a field effect transistor (FET) of the metal oxide semiconductor type. It is a single FET which enhances the technical capabilities of a variety of systems, from basic electronics, to the most advanced home automation and industrial management operations. This type of transistor is a smaller version of the traditional FET, and can be used in both digital and analog applications.The single FET is capable of providing extremely low-resistance paths and higher switching speeds, which makes it suitable for a wide range of applications. These include power amplifiers, low-noise amplifiers, high-speed digital circuits, analog pulse width modulators, and inverters. It is capable of switches with high current load, low noise, and low power elimination capabilities.In terms of design, the PSMN3R8-30LL,115 transistor is a N-channel FET, which means the current flow is achieved with an N-gate. This is called the N-channel FET, because the N-gate is used to control the flow of electricity. The device requires a gate voltage of -4.5 to -7V in order to switch it on and off.The PSMN3R8-30LL,115 transistor has a maximum drain current of 30A and a maximum drain-source voltage of 115V. The maximum power output the device can handle is 350W, which depends on a range of factors such as the voltage, current, temperature and the display of the system in which it is used.When it comes to working principles, the PSMN3R8-30LL,115 transistor operates through the use of an external gate voltage. The gate voltage controls the current that flows between the source and the drain. When a negative voltage is applied to the gate, current flows from the source to the drain, allowing the FET to switch on. When the voltage is removed, current will stop flowing, allowing the FET to switch off.The PSMN3R8-30LL,115 transistor can be used in a variety of applications, including circuit protection, converting simple logic-level inputs into high-power signals, and amplification of audio signals. It is also frequently used as an on/off switch for home automation systems, as well as for power management and a variety of other purposes in industrial operations.Overall, the PSMN3R8-30LL,115 transistor is a single FET of great technical capability and potential, which is well suited to a wide range of applications. With its low-resistance paths, high switching speeds, and ability to handle high currents, it provides excellent performance for a variety of systems.
The specific data is subject to PDF, and the above content is for reference
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