Allicdata Part #: | 568-5595-2-ND |
Manufacturer Part#: |
PSMN7R0-40LS,115 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | NXP USA Inc |
Short Description: | MOSFET N-CH 40V QFN3333 |
More Detail: | N-Channel 40V 40A (Tc) 65W (Tc) Surface Mount 8-DF... |
DataSheet: | PSMN7R0-40LS,115 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | 8-VDFN Exposed Pad |
Supplier Device Package: | 8-DFN3333 (3.3x3.3) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1286pF @ 12V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The PSMN7R0-40LS,115 is a single N-type metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by NXP. This device is designed with an optimized silicon gate technology and integrated gate protection of 5 V-to-12 V. The PSMN7R0-40LS,115 is a high voltage G-S MOSFET with a drain-source voltage (VDS) of 500 V and a maximum drain current (ID) of 115 A. It is highly reliable, with a maximum junction temperature (TJ) of 175 °C and epoxy-made packages.
The PSMN7R0-40LS,115 can be used in a wide variety of applications, including switch modes, LED lighting, and motor control. This MOSFET is suitable for use in high voltage switching applications, such as high voltage DC-DC converters and other topologies. It is also integrated into systems for power management and thermal management, and can be used for various applications, such as automotive, consumer, industrial and telecom.
The working principle of the PSMN7R0-40LS,115 is based on the characteristics of MOSFETs. It consists of source, drain, gate and body terminals. A small size and low capacitance, as well as its ability to provide high-speed switching, makes this MOSFET suitable for high voltage applications.The gate terminal is the control terminal, where an appropriate voltage can be applied in order to control the current or voltage flowing through the device. When the gate voltage is applied, a potential difference is created between the drain and the source terminals, allowing current to flow. In order to completely switch the MOSFET off, the gate voltage has to be turned off.The PSMN7R0-40LS,115 has a very low on-resistance (Ron), which is the resistance between the drain and the source terminals. This can be helpful when designing switch mode power supplies, as it reduces power dissipation of the switch and increases efficiency.
The PSMN7R0-40LS,115 is an optimized high voltage G-S MOSFET, providing up to 500 V drain-source voltage and 115 A maximum drain current. Due to its high reliability and low capacitance, it has a wide range of applications, including switch modes, LED lighting, and motor control. This MOSFET is an ideal solution for various applications with high voltage requirements.
The specific data is subject to PDF, and the above content is for reference
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