PSMN9R0-25YLC,115

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

FETs, or field-effect transistors, are solid-state devices that control current through an electrical field when used as an amplifier or switch. PSMN9R0-25YLC,115 is a single N-channel field-effect power MOSFET from NXP. It is housed in a TO-252-2 Power Surface Mount Package and is designed to switch applications with minimal power losses.

A power MOSFET is a type of FET designed to handle large voltages, currents, and power. The circuit is designed using a gate, drain and source terminal. When used as a switch, gate voltage drives the transistor’s current between the drain and source terminals. When used as an amplifier, the transistor’s current is modulated by the drain voltage.

The PSMN9R0-25YLC,115 has a very low on-resistance, low Qg and ultra-low leakage current which results in an overall lower power dissipation. It is specifically designed for general purpose high voltage computer and telecom switch applications, such as wireless and display controllers, voltage regulator modules (VRMs), controllers for LED drivers, DC-DC converters, and more.

It can handle pulse loads and has a 500mΩ maximum on resistance, which eliminates the need for multiple power MOSFETs in applications with high switching frequency. This also reduces power loss and makes it a reliable switch for high-current applications.

The PSMN9R0-25YLC,115 offers excellent performance, in-line with industry standards, in terms of on-resistance, Qg, Rg and Qgd. It is compatible with automated pick-and-place systems and the 8-lead SO-8 package is ideal for surface mounting. It also features built-in protection features such as body diode protection, electrostatic-discharge protection and a gate-to-source breakdown voltage of 50V.

The PSMN9R0-25YLC,115 provides low-noise switching and high-current handling capabilities, making it ideal for many high-speed switch applications. Its low gate resistance and ultra-low leakage current minimizes switching losses and extends the life of the device. It also minimizes gate capacitance which reduces power loss and increases power efficiency. Overall, the PSMN9R0-25YLC,115 offers excellent performance and reliability, providing a great solution for many high-speed switch applications.

The specific data is subject to PDF, and the above content is for reference