SI5402BDC-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI5402BDC-T1-GE3TR-ND

Manufacturer Part#:

SI5402BDC-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 4.9A 1206-8
More Detail: N-Channel 30V 4.9A (Ta) 1.3W (Ta) Surface Mount 12...
DataSheet: SI5402BDC-T1-GE3 datasheetSI5402BDC-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.9A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI5402BDC-T1-GE3 is a logic level, N-channel Power MOSFET transistor. It is designed for high current switching and amplification applications and is intended for power conversion in servers, switches, routers and computer systems. This device is available with an integrated package to provide a lower on-resistance and faster switching.

The transistor is designed to optimize switching and drain current drive, while minimizing switching losses. It is crafted with a very low gate charge, low gate-source capacitance, and low gate-drain capacitance. With a low on-resistance of 1Ω max and high output power, it is suitable for both high current and high voltage applications.

The SI5402BDC-T1-GE3 operates on the principle of physically separating the electronic charge carriers (electrons and holes) to form a conductive path. When a positive voltage is applied to the gate terminal, the electrons are drawn to the gate and form a conductive path between source and drain. This renders the transistor to be in the “on” state and in a conductive path from the source to drain.

This transistor is also suitable for high frequency operations due to its low capacitance and low gate charge. The low capacitance also reduces power consumption. In addition, the device has a low thermal resistance so it can be used in applications with high power density. The SI5402BDC-T1-GE3 is ideal for applications such as switching power supplies, DC/DC converters, light dimmers, motor control, and power amplifiers.

In summary, the SI5402BDC-T1-GE3 device is an efficient, reliable, and low power consumption N-channel Power MOSFET transistor. It is designed for the highest current switching and amplification applications and is suitable for power conversion in servers, switches, routers and computer systems. With a low on-resistance of 1Ω max, low capacitance and gate charge, high output power, and low thermal resistance, it is suitable for both high current and high voltage applications.

The specific data is subject to PDF, and the above content is for reference

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