Allicdata Part #: | SI5402BDC-T1-GE3TR-ND |
Manufacturer Part#: |
SI5402BDC-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 4.9A 1206-8 |
More Detail: | N-Channel 30V 4.9A (Ta) 1.3W (Ta) Surface Mount 12... |
DataSheet: | SI5402BDC-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 1206-8 ChipFET™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.3W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 4.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 4.9A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5402BDC-T1-GE3 is a logic level, N-channel Power MOSFET transistor. It is designed for high current switching and amplification applications and is intended for power conversion in servers, switches, routers and computer systems. This device is available with an integrated package to provide a lower on-resistance and faster switching.
The transistor is designed to optimize switching and drain current drive, while minimizing switching losses. It is crafted with a very low gate charge, low gate-source capacitance, and low gate-drain capacitance. With a low on-resistance of 1Ω max and high output power, it is suitable for both high current and high voltage applications.
The SI5402BDC-T1-GE3 operates on the principle of physically separating the electronic charge carriers (electrons and holes) to form a conductive path. When a positive voltage is applied to the gate terminal, the electrons are drawn to the gate and form a conductive path between source and drain. This renders the transistor to be in the “on” state and in a conductive path from the source to drain.
This transistor is also suitable for high frequency operations due to its low capacitance and low gate charge. The low capacitance also reduces power consumption. In addition, the device has a low thermal resistance so it can be used in applications with high power density. The SI5402BDC-T1-GE3 is ideal for applications such as switching power supplies, DC/DC converters, light dimmers, motor control, and power amplifiers.
In summary, the SI5402BDC-T1-GE3 device is an efficient, reliable, and low power consumption N-channel Power MOSFET transistor. It is designed for the highest current switching and amplification applications and is suitable for power conversion in servers, switches, routers and computer systems. With a low on-resistance of 1Ω max, low capacitance and gate charge, high output power, and low thermal resistance, it is suitable for both high current and high voltage applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SI5435BDC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 4.3A 1206... |
SI5447DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 3.5A 1206... |
SI5429DU-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 12A PWR P... |
SI5402BDC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 4.9A 1206... |
SI5433BDC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.8A 1206... |
SI5456DU-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 12A PPAK ... |
SI5486DU-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 12A PPAK ... |
SI5401DC-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 5.2A 1206... |
SI5402DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 4.9A 1206... |
SI5402DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 4.9A 1206... |
SI5404BDC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 5.4A 1206... |
SI5406DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 12V 6.9A 1206... |
SI5441DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 3.9A 1206... |
SI5441DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 3.9A 1206... |
SI5445BDC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 8V 5.2A 1206-... |
SI5449DC-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 3.1A 1206... |
SI5449DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 3.1A 1206... |
SI5461EDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.5A CHIP... |
SI5461EDC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 4.5A CHIP... |
SI5463EDC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 3.8A 1206... |
SI5473DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 5.9A 1206... |
SI5475BDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 6A 1206-8... |
SI5475BDC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 6A 1206-8... |
SI5475DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 12V 5.5A 1206... |
SI5475DC-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 5.5A 1206... |
SI5479DU-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 16A CHIPF... |
SI5480DU-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 12A PPAK ... |
SI5481DU-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 12A PPAK ... |
SI5482DU-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 12A PPAK ... |
SI5484DU-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 12A PPAK ... |
SI5485DU-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 12A PPAK ... |
SI5401DC-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 5.2A 1206... |
SI5402BDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 4.9A 1206... |
SI5406DC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 12V 6.9A 1206... |
SI5433BDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 4.8A 1206... |
SI5435BDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 4.3A 1206... |
SI5445BDC-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 8V 5.2A 1206-... |
SI5447DC-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 3.5A 1206... |
SI5463EDC-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 3.8A 1206... |
SI5473DC-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 5.9A 1206... |
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