SI5404BDC-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI5404BDC-T1-GE3-ND

Manufacturer Part#:

SI5404BDC-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 5.4A 1206-8
More Detail: N-Channel 20V 5.4A (Ta) 1.3W (Ta) Surface Mount 12...
DataSheet: SI5404BDC-T1-GE3 datasheetSI5404BDC-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI5404BDC-T1-GE3 transistor is a single n-channel organic semiconductor FET (OSFET) (Field Effect Transistor) with a low on-resistance and low transition capacitance of 3OHMS and 0.3pF respectively. It is a small form factor that is easy to use in various applications. This transistor can easily be used in HVAC (Heating, Ventilation, and Air Conditioning), lighting control, motor control, robotic control and other industrial automation solutions. It is used for switching, sensing and controlling the current flows in various applications.

The SI5404BDC-T1-GE3 is characterized by its low on-resistance, size and construction. The on-resistance of the device is 3OHMS and the transition capacitance is 0.3pF. The on-resistance and low transition capacitance of the device make it attractive for applications such as control of HVAC systems and motor speed control. The device is rated for an operating temperature range of -40 to 85 degrees Celsius.

The basic working principle of an OSFET is the same as a normal FET; an applied voltage from the gate will induce a source-drain current. The difference is that the transistor\'s threshold voltage is much lower than that of a regular FET. This means that for a given applied gate voltage, the transistor will turn on much more quickly than a normal FET.

The unique features of the SI5404BDC-T1-GE3 transistor make it ideal for many applications. As stated above, it is suitable for applications such as HVAC control and motor speed control. It has many other potential usages in industrial automation, robotic control, and other applications requiring precise control. It is also used in consumer applications such as sound systems and TV sets.

The SI5404BDC-T1-GE3 is a great choice for applications that require a small form factor, low on-resistance, and low transition capacitance. It is a versatile device that can be used for a variety of applications across many different industries and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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