SI5441DC-T1-GE3

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The SI5441DC-T1-GE3 is a N-channel enhancement-mode field-effect transistor (FET) of the SuperFET series manufactured by SiliconiX. The device is constructed using a high-speed advanced low-voltage device (ALVD) process, which enables it to provide better device performance than other similar devices.

The SI5441DC-T1-GE3 operates over a wide range of gate and drain to source voltages and is compatible with various gate drivers. It utilizes a trench-gate structure that allows a very low on-state resistance, making it suitable for applications such as power switching, motor control, and motor drive circuits.

The device features integrated protection features such as under-voltage and over-current locking, over-temperature protection, as well as an integrated frequency compensation circuit. This makes it a desirable choice for applications requiring robust operation in high-current and high-temperature environments. The device also has a Leakage Current Blocker that prevents false triggering of the protection circuit when transitioning from off to on.

The SI5441DC-T1-GE3 provides excellent performance characteristics such as low operating and switching losses, fast switching speeds, and low on-resistance. These characteristics make it an attractive choice for designs requiring high power density, fast operation, and low power dissipation. Additionally, owing to its integrated protective features, the device is also well-suited for use in automotive, industrial, and power supply applications.

The working principle of the SI5441DC-T1-GE3 is based on the use of voltages applied to the gate of a field-effect transistor (FET) to modulate the flow of current between the source and drain. When the gate voltage is below the threshold level, the transistor will be OFF, meaning no current will flow between the source and the drain. However, when an appropriate gate voltage level is applied, current will be allowed to flow between the source and the drain.

The gate of the FET is insulated from the channel by a relatively thin layer dielectric material, such as silicon dioxide. This dielectric material acts as a capacitor, with the threshold voltage being determined by the capacitance of the capacitor. When the gate voltage is higher than the threshold voltage, the FET will be operating in an enhancement-mode and the current flow between source and drain will increase.

The on-resistance of the device is determined by the width of the gate-drain current channel. This means that the wider the channel is, the lower the on-resistance is. The SI5441DC-T1-GE3 utilizes a trench-gate structure, which provides a wider conductive channel than other similar devices.

In conclusion, the SI5441DC-T1-GE3 is a high-performance N-channel enhancement-mode FET of the SuperFET series, designed specifically for high-power and high-temperature applications. The device features excellent performance characteristics, integrated protection features, and low on-resistance. Its wide range of gate and drain to source voltages, coupled with its compatibility with various gate drivers make it an attractive choice for a wide variety of applications.

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