SI5475DC-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI5475DC-T1-GE3 is a discrete MOSFET, specifically a power MOSFET. It is a monolithic integrated circuit that consists of three main components—the source, the gate, and the drain—and two control functions—the gate drive and the gate control.

The source of a MOSFET is the connection where electrons originate. The gate is the control terminal of a MOSFET that allows current to flow from the source to the drain. The gate drive and the gate control allow the gate voltage to be adjusted and the drain current to be limited, respectively.

A MOSFET is an efficient and versatile discrete component that is used in many electronic applications. A few of the most common applications for the SI5475DC-T1-GE3 are:

• DC-DC conversion
• Full wave rectification
• Power supply circuits
• Switch-mode power supply (SMPS) circuits

In these applications, the SI5475DC-T1-GE3 performs two main functions—the switching and the control of current flow. When the gate voltage is applied, the MOSFET opens, allowing electrons to flow from the source to the drain. The amount of current flowing through the device can be adjusted by controlling the gate voltage.

The gate drive of the SI5475DC-T1-GE3 is designed to limit the voltage applied to the gate. This protects the device from excessive voltages and prevents damage to the device.

The gate control of the device is responsible for limiting the drain current. When the drain current reaches the maximum limit specified by the manufacturer, the gate control circuit of the device shuts off the device.

The SI5475DC-T1-GE3 is a versatile MOSFET that can be used in many different applications. It is a reliable and cost effective device that has excellent thermoelectric properties, making it an ideal choice for many power electronics applications.

The specific data is subject to PDF, and the above content is for reference