SI5473DC-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI5473DC-T1-GE3-ND

Manufacturer Part#:

SI5473DC-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 12V 5.9A 1206-8
More Detail: P-Channel 12V 5.9A (Ta) 1.3W (Ta) Surface Mount 12...
DataSheet: SI5473DC-T1-GE3 datasheetSI5473DC-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 1206-8 ChipFET™
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.3W (Ta)
FET Feature: --
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Drain to Source Voltage (Vdss): 12V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI5473DC-T1-GE3 is an advanced electronic engineering device which is typically used when a reliable and efficient transistor replacement is needed. It is a single transistor designed to be used in a variety of different applications. This article will discuss in detail the application field and working principle of the SI5473DC-T1-GE3.

The application field of the SI5473DC-T1-GE3 includes current or voltage sources, amplifiers, comparators and switches. It is suitable for use in multiple applications ranging from low voltage audio circuits to high speed RF/microwave devices. Additionally, it can be used to replace components such as MOSFETs, FETs, BJTs and diodes due to its high efficiency. Furthermore, it is suitable for both small and large-scale systems.

When it comes to the working principle of the SI5473DC-T1-GE3, it is an N-channel MOSFET whose operation is based on the principles of capacitance. This means that its operating characteristics can be adjusted by adjusting the amount of current flowing through the device. Moreover, it can be used to increase or decrease the sensitivity of the signal being transmitted by simply altering the applied voltage. Additionally, the drive current through the device can be adjusted over a wide range with the use of a voltage-to-current (V-I) converter.

When the transistor is activated, an electrical charge is created across the gate and source terminals. This charge controls the flow of electrons, which in turn controls the device\'s operating characteristics. This input resistance can be adjusted, allowing the circuit designer to control the signal flow and improve system efficiency. Furthermore, the impedance is dependent on the characteristics of the MOSFET, making it a preferred device when high precision is required.

The SI5473DC-T1-GE3 is an advanced device capable of providing reliable and efficient performance in a variety of applications. It has a wide range of application fields and its operating characteristics can be adjusted with the use of a voltage-to-current (V-I) converter. It is suitable for use in current or voltage sources, amplifiers, comparators and switches, and can also be used to replace components such as MOSFETs, FETs, BJTs and diodes due to its high efficiency. Furthermore, it is suitable for both small and large-scale systems and provides improved signal control with the use of its input resistance adjustment.

The specific data is subject to PDF, and the above content is for reference

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