SI5482DU-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI5482DU-T1-GE3 is an Internal semiconductor whose purpose is to link and control analog signals with the digital environment within a wide array of applications. This device serves as a useful member of the growing list of devices designed to help users with their digital/electronic projects. The semiconductor also features a programmable logic controller as well as an additional benefit of supplying clean DC power to surrounding devices. This allows for more efficient power management and flexibility.

This particular type of semiconductor, an N-Channel Enhancement Mode Field Effect Transistor (FET), utilizes a non-linear juncture between three independent terminals, namely the Source (S), the Gate (G) and the Drain (D). The two major components of the device are the MOSFET and the Special Nickel-Stable Gate Transistor (GnT).

The MOSFET serves as the control part of the semiconductor, where current through the drain is strictly regulated by the small, but capacitative electric field formed between the gate and source terminals. This allows for efficient current control as the small electric field is triggered by a low level current applied to the gate. As the gate voltage increases, the junction between the source and the drain widens, letting more current through the transistor.

The second major component of the SI5482DU-T1-GE3 is the Special Nickel-Stable Gate Transistor (GnT). This transistor utilizes the same principles as the MOSFET, but allows for a more efficient control of voltage and current within the device. Whereas the MOSFET is limited in terms of current control, the GnT provides further control due to its oxide-nitride interface. This ensures that the device is able to withstand higher levels of heat and provide up to an enhanced 40 V gate voltage.

The SI5482DU-T1-GE3 is a versatile device for many electronic and digital projects, offering an array of adjustable parameters and settings. Its core elements, the MOSFET and the GnT, are capable of providing excellent performance at a low price point. The device is helpful for a wide range of operations, from providing clean DC power for sensitive circuits, to triggering low power consuming machines, making it a great choice for projects of various sizes.

The specific data is subject to PDF, and the above content is for reference