Allicdata Part #: | SI5411EDU-T1-GE3TR-ND |
Manufacturer Part#: |
SI5411EDU-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 12V 25A PPAK CHIPFET |
More Detail: | P-Channel 12V 25A (Tc) 3.1W (Ta), 31W (Tc) Surface... |
DataSheet: | SI5411EDU-T1-GE3 Datasheet/PDF |
Quantity: | 9000 |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Package / Case: | PowerPAK® ChipFET™ Single |
Supplier Device Package: | PowerPAK® ChipFet Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -50°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 6V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 105nC @ 8V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 8.2 mOhm @ 6A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI5411EDU-T1-GE3 is a MOSFET that belongs to the Single family of transistors. It is used in industrial and commercial hardware components and falls under the general category of Field Effect Transistors, or FETs.
The SI5411EDU-T1-GE3 works on the same principle as other transistors: using an applied voltage to control the flow of electric current. With a MOSFET, the electric current is controlled by the MOSFET’s gate voltage and independent of the current applied to its body. This is advantageous in applications where currents need to be switched rapidly with minimal energy loss.
In its application field, the SI5411EDU-T1-GE3 is used in both industrial and commercial settings, with the most general uses being in power systems and communications. In power systems, the SI5411EDU-T1-GE3 is often used as a switch between high-power sources and loads. In communications, commonly used in digital circuitry, the SI5411EDU-T1-GE3 is used for its fast switching capabilities, which provide improved performance compared to older transistor technologies. The SI5411EDU-T1-GE3 is also a good choice for low-voltage, high-frequency applications where low on-resistance and low input capacitance are beneficial.
The SI5411EDU-T1-GE3 includes a variety of gate-level protection features, including an active body biasing feature and an over-temperature protection feature. The biasing feature ensures that the MOSFET operates in its linear region at all times, while the over-temperature protection feature prevents the device from overheating under certain conditions. Additionally, the SI5411EDU-T1-GE3 features an optimized gate protection for improved performance.
The SI5411EDU-T1-GE3 is also well suited for use in harsh environments, as it has a variety of over-temperature, over-voltage, and electrostatic discharge protection features. The over-voltage protection prevents damage to the device due to short-term voltage fluctuations,while the electrostatic discharge protection helps protect the device from electric shock due to human contact.
In conclusion, the SI5411EDU-T1-GE3 is a reliable and versatile MOSFET, with a wide range of applications. Its fast switching capability, robust gate protection, and protection features make it well suited for use in both industrial and commercial settings.
The specific data is subject to PDF, and the above content is for reference
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