Allicdata Part #: | SI5419DU-T1-GE3TR-ND |
Manufacturer Part#: |
SI5419DU-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 30V 12A PPAK CHIPFET |
More Detail: | P-Channel 30V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface... |
DataSheet: | SI5419DU-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-PowerPak® ChipFet (3x1.9) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1400pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI5419DU-T1-GE3 is a high performance single-channel MOSFET transistors designed for use in a variety of applications. The device is a Field-Effect Transistor (FET) that utilizes a Gate-and-Drain (G-D) construction to control the current flow through the device. This type of transistor is ideal for use in digital and analog circuits, power electronics applications, and test and measurement instruments.
The SI5419DU-T1-GE3 has a wide voltage range that spans from 0.8V up to 2.5V, making it suitable for a variety of low-voltage applications. It has a low on-state resistance of 0.105ohm and a low gate-drive voltage requirement of 2V relative to the source. This device is also capable of operating at a very low temperature range, down to -25°C. The wide range of features make it suitable for a wide range of applications and environments.
The device has a wide range of applications and uses, such as automotive electronics and control circuits, as well as power supplies, motor drivers and consumer electronics. It is also suitable for use in audio and video signal switching, as well as instrumentation, medical and industrial applications. The SI5419DU-T1-GE3 is also frequently used in power management, computer systems, instrumentation, and digital signal processing (DSP).
The SI5419DU-T1-GE3 is a drain-to-gate enhancement-mode field-effect transistor that works by creating an electric field in the gate region which controls the current flow between the source and drain. When a positive voltage is applied to the gate, a depletion layer is formed near the source and drain increasing the resistance. This increase in resistance reduces the current that flows between the source and drain. Conversely, when a negative voltage is applied to the gate, the depletion layer is reduced and the current flow increases.
The SI5419DU-T1-GE3 is an excellent choice for many applications due to its wide range of features. It is suitable for use in a variety of low-voltage systems, with a wide operating temperature range, low on-state resistance, and a low gate-drive voltage requirement. It can be used in automotive, consumer electronics, audio and video switching, and instrumentation applications, as well as a variety of other applications. With its wide range of features and applications, the SI5419DU-T1-GE3 is a versatile and reliable choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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