SI5446DU-T1-GE3

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SI5446DU-T1-GE3 Application Field and Working Principle

The SI5446DU-T1-GE3 is a high-performance CMOS, MOSFET (Metal-oxide Semiconductor Field-Effect Transistor) with power dissipation and low threshold voltage. It is a single transistor device, with a drain current capability of up to 10 amps (at 10 V) and a gate-source breakdown voltage of up to 30V.

The device is ideal for applications involving high power switching and DC-DC converters, as it can handle large pulse currents, offers high current handling capability and provides a low input threshold voltage. The device can be used to switch a range of loads, such as LEDs, incandescent and other types of lighting, DC motors, and industrial applications.

The SI5446DU-T1-GE3 has a silicon body material with a N-channel enhancement mode technology. This enables the device to have low input threshold voltage (2.6V) and a low on- impedence path from the source to the drain. The gate-source voltage with the device is between 10V and 30V for proper operation and maximum current working capability.

The device also includes a Schottky diode between the drain and source which serves to protect the device in case of reverse voltage. This helps ensure that the device will operate safely and effectively in the system. The device has a maximum operating temperature of 125°C, and the average on-resistance of the device is 2.8 ohms, which makes it a good choice for high power applications.

The SI5446DU-T1-GE3 also has a low gate capacitance of 5pF and a maximum rise time of 8ns, which makes it well suited for high frequency applications. The device has a robust package with a rated insulation layer that enables the device to absorb shock and vibration. The package is resistant to moisture and chemically stable, making it suitable for use in a wide range of applications.

The SI5446DU-T1-GE3 is a reliable, high-performance device that is suitable for use in a variety of applications. It has an excellent current handling capability, with a drain current up to 10 amps, and it has a low input threshold voltage and a robust package with a rated insulation layer. Additionally, it has a maximum operating temperature of 125°C, a low gate capacitance of 5pF, and a maximum rise time of 8ns, making it well suited for high frequency applications. The device is suitable for use in applications involving high power switching and DC-DC converters, a range of loads such as LEDs, incandescent and other types of lighting, DC motors, and industrial applications.

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