SI5459DU-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI5459DU-T1-GE3TR-ND

Manufacturer Part#:

SI5459DU-T1-GE3

Price: $ 0.18
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 8A CHIPFET
More Detail: P-Channel 20V 8A (Tc) 3.5W (Ta), 10.9W (Tc) Surfac...
DataSheet: SI5459DU-T1-GE3 datasheetSI5459DU-T1-GE3 Datasheet/PDF
Quantity: 3000
3000 +: $ 0.16283
Stock 3000Can Ship Immediately
$ 0.18
Specifications
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Package / Case: PowerPAK® ChipFET™ Single
Supplier Device Package: PowerPAK® ChipFet Single
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 3.5W (Ta), 10.9W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 10V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 52 mOhm @ 6.7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Introduction

The SI5459DU-T1-GE3 is a high voltage, N-channel enhancement mode MOSFET that is used for short-circuit protection, load and line regulation, and general purpose DC-DC boost switching applications. It is a dual N-channel MOSFET that can handle up to 200V drain-to-source voltage and up to 11A of peak drain current. The SI5459DU-T1-GE3 also has an improved ESD protection rating of up to 2kV.

Application Field

The SI5459DU-T1-GE3 is ideal for a number of applications, including power supplies and DC-DC converters. It is also suitable for use in high-voltage, high-current applications such as automotive, telecom, networking, and industrial equipment. The device can be used to regulate electrical parameters such as voltage, current, charging and discharging rate, and frequency.

The SI5459DU-T1-GE3 is also suitable for use in Critical Mode Power Field Effect Transistor (CMOSFET) applications. CMOSFETs are commonly used in radio-frequency (RF) transceivers and amplifiers, motion control systems, digital logic circuits, and power conversion circuits. As CMOSFETs are used in a wide variety of applications, the SI5459DU-T1-GE3 can be used to power or control these applications.

Working Principle

The SI5459DU-T1-GE3 operates with a common source configuration which consists of a source and a drain connection, and a gate terminal which is used to control the current flow between the source and the drain. When the gate voltage is at or below the threshold voltage, the transistor remains OFF and no current flows. When the gate voltage is increased above the threshold voltage, the transistor becomes ON and the current between the source and the drain starts to flow.

The SI5459DU-T1-GE3 also utilizes enhanced mode MOSFET technology, which allows the device to have a lower gate drive voltage, which in turn improves the efficiency of the device. The lower gate drive voltage also means that the device is more efficient at maintaining a steady voltage and current. As a result, the SI5459DU-T1-GE3 can be used to reduce power loss, improve switching speed, and reduce overall power consumption.

The SI5459DU-T1-GE3 is a rugged device that can handle high voltages and high currents. It is also capable of withstanding high levels of electrical and thermal stress, making it suitable for use in demanding applications. The device also has a low on-resistance, which improves the efficiency of the MOSFET, and a wide operating temperature range.

Conclusion

The SI5459DU-T1-GE3 is a high voltage, N-channel enhancement mode MOSFET that is suitable for a wide range of applications. It is capable of handling high voltages and high currents, as well as providing enhanced ESD protection. The device has a wide range of features that make it easily adaptable to a variety of applications, such as power supplies, DC-DC converters, RF transceivers, motion control systems, and digital logic circuits. The SI5459DU-T1-GE3 is a rugged device that can withstand high voltage and thermal stress, and its low on-resistance helps to improve the efficiency of the device.

The specific data is subject to PDF, and the above content is for reference

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