Allicdata Part #: | SI5476DU-T1-E3TR-ND |
Manufacturer Part#: |
SI5476DU-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 12A PPAK CHIPFET |
More Detail: | N-Channel 60V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface... |
DataSheet: | SI5476DU-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® ChipFET™ Single |
Supplier Device Package: | PowerPAK® ChipFet Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 34 mOhm @ 4.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5476DU-T1-E3 is a low capacitance dual N-Channel ESD protected MOSFET for high speed data applications, providing low ON-resistance and high current capabilities. It is perfect for USB, HDMI and other interface applications that require fast switching and low ON-resistance. The SI5476DU-T1-E3 is a highly integrated device, with integrated ESD protection, an internal Zener clamp, and a temperature monitor that prevents the MOSFET from exceeding a maximum pre-set temperature.This type of MOSFET is well-suited for applications that require non-volatile protected loading and unloading of circuits. It is primarily used in consumer products, such as computers and mobile phones, as well as medical and industrial equipment. It is also used in high power supplies, such as LED lighting and power control systems.
The operating principle of the MOSFET works by creating two channels, one of which is active. As the voltage across the gate-source terminal is increased, the active channel widens, allowing more current to flow. This increases the flow within the device, which in turn produces a higher output current. As current passes through the MOSFET, an improved signal-to-noise ratio is also produced. When a voltage is applied to the gate-source terminal, an ON-state is achieved, allowing current to flow freely; when no voltage is applied, an OFF-state is achieved, preventing any current from flowing.
The MOSFET is capable of handling large currents and high capacitive loads. This makes it well suited for high speed switching applications, such as USB ports and Ethernet lines. It is also characterized by low ON-resistance, which is essential for minimizing signal distortion as well as power consumption. In addition, its low gate-drain capacitance ensures high switching speed and low power consumption. The integrated ESD protection is also advantageous as it prevents delicate signals from being damaged or distorted.
The integrated Zener clamp is beneficial in protecting the device from high voltage currents, which can lead to catastrophic failure. The integrated temperature monitor helps to regulate the temperature of the device, preventing it from over-heating and thus increasing its durability and reliability. The SI5476DU-T1-E3 is a tremendous solution for fast switching and low ON-resistance applications that require non-volatile protection and high current capability.
The specific data is subject to PDF, and the above content is for reference
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