SI5482DU-T1-E3

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The SI5482DU-T1-E3 are advanced, low-on-resistance, low gate charge, single N-Channel MOSFETs designed for various topology applications. This device is offered in single, low-voltage configuration.

This device contains a P-channel and N-channel MOSFET in one package, the die is insulated from the heat sink using the insulated interface. The SI5482DU-T1-E3 devices have low on-resistance, high transconductance and a low input capacitance for improved operation over temperature. The devices are designed for high- and low-side switches, current limitation, power supplies, low-side switching, OR-ing diode, resonant converter and soft-start applications.

The SI5482DU-T1-E3 devices are available in the PowerPAD™ and TSSOP14 packages and are ideal for applications requiring optimal board space. The thermal characteristics of these packages enable the devices to operate at higher temperature than standard packages with lower junction temperature, leading to an improved system performance.

One of the primary applications of the SI5482DU-T1-E3 device is low-side switching and power supplies. The low turn on and turn off times, combined with the low on-resistance, make the device ideal for controlling high currents and voltages. Additionally, the low input capacitance of the device makes it suitable for low-noise switching applications.

The working principle of a SI5482DU-T1-E3 device is based on the MOSFET\'s unique ability to control current flow through the use of a voltage applied to the gate. The voltage applied to the gate of the MOSFET modifies the electric field present in the depletion layer between the drain and source terminals allowing current to flow. By controlling the voltage applied to the gate of the MOSFET, the current flow through the device can be accurately controlled. This, in turn, allows the device to be used in switching and current limiting applications.

The SI5482DU-T1-E3 device offers excellent performance for switching and current limiting applications. The low on-resistance and low gate charge enable the device to provide excellent power efficiency and the low input capacitance enable it to reduce noise. The single-sided package configuration makes it ideal for use in designs requiring high power density.

The SI5482DU-T1-E3 device is a reliable, easy to use and cost-effective solution for switching and current limiting applications. The device\'s superior performance and single package configuration enable it to provide an ideal solution for high-power density designs.

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