
Allicdata Part #: | SI7840BDP-T1-GE3-ND |
Manufacturer Part#: |
SI7840BDP-T1-GE3 |
Price: | $ 0.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 11A PPAK SO-8 |
More Detail: | N-Channel 30V 11A (Ta) 1.8W (Ta) Surface Mount Pow... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.73000 |
10 +: | $ 0.70810 |
100 +: | $ 0.69350 |
1000 +: | $ 0.67890 |
10000 +: | $ 0.65700 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 16.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction
The SI7840BDP-T1-GE3 is a logic-level N-channel enhancement-mode field effect transistor (FET) featuring a vertical P-channel MOSFET architecture, with a high-frequency, low gate-charge, and a very low gate-to-channel capacitance ratio. This transistor is specifically designed for applications such as relay and lamp drivers, motor control, rectifiers, and other switching applications.
Application fields
The SI7840BDP-T1-GE3 is a logic-level N-channel enhancement-mode FET which has numerous applications. It can be used in switching applications of various sorts, such as in point-of-load converters, relay drivers, lamp drivers, and rectifiers. In addition to switching applications, this vertical P-channel MOSFET can also be used in motor control. As it features a very low gate-to-channel capacitance ratio, switching at high frequencies is possible. This makes it ideal for this type of application, as current can be switched with minimal losses.
Working Principle
The working principle of the SI7840BDP-T1-GE3 is similar to that of other MOSFETs. It works by controlling the current flow between the source, gate and drain terminals. In a MOSFET, a control voltage applied to a gate terminal can control the current flow between the source and drain terminals.When a positive voltage is applied to the gate terminal, it attracts an electron to the channel turning the device on. The current flows from the source to the drain terminal. When the voltage is reduced or reverted to the negative, the device turns off and the current flow stops.The low gate-charge characteristic of the SI7840BDP-T1-GE3 makes it ideal for switching applications, as the current can be switched without much loss of power. In addition, the very low gate-to-channel capacitance ratio allows it to switch at high frequencies with minimal losses.
Conclusion
The SI7840BDP-T1-GE3 is an excellent choice for a wide range of applications, due to its low gate charge, low gate-to-channel capacitance ratio, and high switching frequency capabilities. It can be used for switching of various sorts, such as relay drivers, lamp drivers, and rectifiers, as well as motor control. The device works by controlling the current flow between the source, gate and drain terminals, and by applying a control voltage to the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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