SI7804DN-T1-E3 Allicdata Electronics
Allicdata Part #:

SI7804DN-T1-E3TR-ND

Manufacturer Part#:

SI7804DN-T1-E3

Price: $ 0.83
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 30V 6.5A 1212-8
More Detail: N-Channel 30V 6.5A (Ta) 1.5W (Ta) Surface Mount Po...
DataSheet: SI7804DN-T1-E3 datasheetSI7804DN-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: $ 0.83000
10 +: $ 0.80510
100 +: $ 0.78850
1000 +: $ 0.77190
10000 +: $ 0.74700
Stock 1000Can Ship Immediately
$ 0.83
Specifications
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI7804DN-T1-E3 is a N-Channel 30V-Rated Logan Enhanced Mode MOSFET that is used in applications such as power switches, level shifters and other power management solutions. It is designed with a 30V drain-source rating and its drain-source breakdown voltage of 60V makes it suitable for a wide range of applications.

The SI7804DN-T1-E3 has an RDS(on) of 0.56 Ω, a gate voltage range from -15 to -20V and a gate charge of 7nC. It features a fast switch-off capability and low gate-source capacitance. It is also protected from gate current surges with a built-in Zener diode.

The SI7804DN-T1-E3 has a wide range of applications. It is suitable for use in 24V, 48V and 100V systems, and can be used in robotics, automotive, power converters, mobile phones and other portable applications. In addition, it can be used in power supply design, power management, portable power tools and inverters.

The working principle of the SI7804DN-T1-E3 is similar to other MOSFETs. When the gate voltage is higher than the threshold voltage, the Drain and the Source form a conducting channel which allows current to flow between them. The strength of this conducting channel is determined by the voltage applied to the gate. By increasing the gate voltage, the conducting channel will become stronger and allow more current to flow between the Drain and the Source.

The SI7804DN-T1-E3 is a great choice for applications requiring high efficiency and low power consumption. It allows for a wide range of operating voltages, reducing the number of components needed and providing an energy-efficient solution. In addition, its fast switching speeds, low capacitance and low RDS(on) make it ideal for high-speed switching applications such as digital logic and power conversion.

In summary, the SI7804DN-T1-E3 is an excellent option for a wide range of power management applications. Its wide range of operating voltages, fast switching speeds and low RDS(on) make it an ideal choice for a variety of applications. Its built-in Zener diode provides additional protection from gate current surges, a feature that is especially important for automotive, power converter and robotics applications.

The specific data is subject to PDF, and the above content is for reference

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