SIHP14N50D-GE3

SIHP14N50D-GE3 is a high-power silicon-insulated H-bridge (SIHP) power MOSFET. It is based on the latest MOSFET technology and works on the principle of voltage source control. The device is capable of switching up to 14A and with a maximum drain-source voltage of up to 50V. The device exhibits excellent temperature performance, high power efficiency and low ON-resistance.

The SIHP14N50D-GE3 is mainly used in the field of power conversion, particularly in applications such as motor control, audio power amplification, DC/AC conversion and wireless charging. The device has an excellent ESD protection capability and fast switching speed, which makes it an ideal choice for applications that require high reliability and fast response time.

In general, power MOSFETs work on a voltage-controlled principle. When the voltage applied to the gate terminal is increased, the MOSFET conducts. On the other hand, when the voltage is reduced, the MOSFET stops conducting. The SIHP14N50D-GE3 is a logic-level gate threshold device, which means that the gate voltage should be set between the threshold voltage and the maximum gate voltage for the device to be effectively switched.

The SIHP14N50D-GE3 has a number of features that make it a suitable choice for various applications. It offers low on-resistance, which helps in reducing power loss. Additionally, the device is equipped with a robust zener diode-based ESD protection circuitry at the gate, source and drain terminals, to protect them from damage due to electrostatic discharge. The SIHP14N50D-GE3 also offers superior temperature performance, enabling it to operate reliably in harsh and high temperature environments.

Moreover, the SIHP14N50D-GE3 has a very fast switching speed, which allows for a rapid response time. This makes the device suitable for applications requiring a fast response. Furthermore, the device is designed for high-power applications, allowing for higher current and voltage ratings than conventional MOSFETs.

In conclusion, the SIHP14N50D-GE3 is an excellent power MOSFET, which is suitable for various applications. Due to its various features, such as low on-resistance, robust ESD protection, superior temperature performance and fast switching speed, the device is an ideal choice for applications in power conversion, motor control, audio power amplification, DC/AC conversion and wireless charging.