SIHP8N50D-GE3

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	156W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	527pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	850 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8.7A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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SIHP8N50D-GE3 is a type of n-channel enhancement-mode, insulated gate field effect transistor (IGFET) commonly used in many fields such as automotive, industrial, and communication applications. This type of MOSFET can be used in a variety of applications with the appropriate device parameters. It is also used as a switch to open or close a circuit or as a power amplifier.The SIHP8N50D-GE3 device is an enhancement-mode MOSFET that uses a single, integrated gate field-effect transistor (FET). FETs consist of a semiconductor material composed of a source (n-type material) and a drain (p-type material). By applying a voltage between the gate and source, a conducting channel is created through the n-type material (also known as a "gate"). This channel is used to control the current flowing between the drain and the source.The SIHP8N50D-GE3 device is a popular application for overheating field effect transistors (FETs) because it has a low Rdson (drain resistance) and a low threshold voltage (typically 4V). The low Rdson provides good thermal performance while the low threshold voltage enables low operation voltage devices.The SIHP8N50D-GE3 device operates in enhancement mode. It has a very fast switching speed and can be used in high-frequency applications such as automotive and power amplifiers. The device features a high breakdown voltage of 800V and a low gate-source capacitance of 12nF. This results in low power losses and improved performance in high-speed applications.In operation, the SIHP8N50D-GE3 device acts as a switch to open or close a circuit. When the gate voltage is below the threshold voltage, the channel is off and no current will flow. When the voltage is above the threshold, the transistor will be switch on and the current can flow from source to drain.The SIHP8N50D-GE3 is also commonly used as a power amplifier in various applications. In this application, the gate voltage controls the current through the n-type material which allows the voltage or current gain in the signal before the signal is amplified.The SIHP8N50D-GE3 is a popular FET with a wide range of applications. It is used in automotive and industrial applications as a switch or power amplifier and also in communication applications. It has a low on-resistance and a low threshold voltage that enables low-voltage operations. Due to its fast switching speed, it is also suitable for high-frequency applications.

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