| Allicdata Part #: | SIHP10N40D-GE3-ND |
| Manufacturer Part#: |
SIHP10N40D-GE3 |
| Price: | $ 0.50 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET N-CH 400V 10A TO-220AB |
| More Detail: | N-Channel 400V 10A (Tc) 147W (Tc) Through Hole TO-... |
| DataSheet: |  SIHP10N40D-GE3 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.45318 |
Specifications
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 147W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 526pF @ 100V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 30nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 400V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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The SIHP10N40D-GE3 is a single N-channel silicon insulated-gate field-effect transistor (FET) designed for use in switching and amplifier applications. It is constructed with a monolithic silicon body and has a high switching speed and low on-state resistance. Additionally, the device has a wide voltage range, high power-handling capabilities, and low gate drive power requirements.This FET is manufactured by STMicroelectronics and is an improved version of their general-purpose SIHP10N40 devices. It includes modifications that allow it to withstand higher currents and operating temperatures. It also has a greater temperature range than the older SIHP10N devices. As such, the SIHP10N40D-GE3 is particularly well suited for use in critical applications such as those found in automobiles and avionics systems.The SIHP10N40D-GE3 FET operates on the principle of field-effect action. When the gate voltage is below the threshold voltage (VGS(th)), the FET is said to be in the off-state. This means that there is no conduction between the source and drain of the FET. However, when the gate voltage (VGS) is greater than the threshold voltage, the FET is said to be in the on-state. This is because the gate-induced electric field reduces the potential barrier between the source and drain and allows current to flow.The SIHP10N40D-GE3 can handle up to 10A and drain-source voltage of up to 400V. It has a maximum junction temperature of 150°C and can operate over a wide temperature range of -55 to 150°C. It also has a low gate capacitance of 3.2nF, which reduces gate drive power requirements and helps to improve switching speed.The SIHP10N40D-GE3 is typically used in switching and amplifying applications, particularly in low-/medium-power, advanced logic-levelmosfets, in automotive, and avionics systems. It is also used in other applications such as lighting and battery management systems.In summary, the SIHP10N40D-GE3 is a single N-channel silicon insulated-gate FET designed for use in switching and amplifier applications. Its high switching speed and low on-state resistance make it suitable for use in critical applications such as those found in automobiles and avionics systems. Additionally, its wide voltage range, high power-handling capabilities, and low gate drive power requirements make it an attractive choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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