SIHP15N60E-E3

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SIHP15N60E-E3 is a type of silicon-based MOSFET. MOSFETs are insulated gate field effect transistors (IGFETs)—transistors based on a semiconductor device with an insulated gate, allowing this transistor to have very high switching frequencies. This type of transistor is also referred to as a metal-oxide-semiconductor field-effect transistor (MOSFET). This transistor type is especially desirable for high frequency switching applications.

The SIHP15N60E-E3 is of a higher reliable, high-efficiency MOSFET developed using the advanced SOI (silicon-on-insulator) technology. This technology can improve performance in high frequency, high temperature and extreme duty cycle applications. The design of the transistor makes it more reliable and low power loss while maintaining a very long lifetime making this is an excellent choice for high-powered and complex applications.

The SIHP15N60E-E3 is a N-channel MOSFET, meaning the conduction path of electrons is through the drain-source voltage. The transistor provides a very low drain-source on-resistance of about 0.15 Ohm at 10V. This property is a desirable feature as it means very low power loss is experienced by the transistor during operation. The part also has a higher working gate voltage given its lockout voltage of up to 15 Volts. This ensures that the MOSFET is not turned on or off unintentionally. The device is capable of dissipation at a maximum of 97 Watts, making it suitable for high-powered applications. The device has low gate-charge making it ideal for high-frequency applications. The maximum drain-source current of the device is 15 Amps at 25 degrees Celsius and maximum operating temperature of up to 175 degrees Celsius.

The SIHP15N60E-E3 is mainly used in high-powered applications such as solar energy distribution, motor control, and power supply. The device’s high switching speeds, low resistance and a long lifetime are some of the features that make it suitable for these applications. The wide operating temperature and high maximum power dissipation capabilities make it an ideal choice for high frequency switching applications. The lower gate-charge feature of the device makes it an excellent choice for applications that require precise timing.

The working principle of the SIHP15N60E-E3 is simple. When a voltage is applied to the gate of the device, it makes the transistor turn on, allowing electrons to flow through the drain-source path. When a higher voltage is applied at the gate, the transistor turns off and there is no electron flow through the drain-source path. This simple on-off switching action of the SIH15N60E-E3 allows it to be used in various applications where precise timing, high switching speeds and low power loss are required.

The SIH15N60E-E3 is a high reliability, high efficiency MOSFET developed using the latest silicon-on-insulator technology. The device has a wide operating temperature range and high switching speeds. It also has a very low drain-source on resistance, a low gate-charge, higher operating gate voltage and a long lifetime. The device is mainly used in applications such as solar energy distribution, motor control and power supply due to its ability to precisely time switching, low power loss, and rapid switching speeds. The working principle of the device is relatively simple and involves the turning on or off of electrons flowing through its drain-source path.

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