SIHP24N65E-E3 Allicdata Electronics
Allicdata Part #:

SIHP24N65E-E3-ND

Manufacturer Part#:

SIHP24N65E-E3

Price: $ 4.16
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 650V 24A TO220AB
More Detail: N-Channel 650V 24A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: SIHP24N65E-E3 datasheetSIHP24N65E-E3 Datasheet/PDF
Quantity: 963
1 +: $ 4.15800
10 +: $ 4.03326
100 +: $ 3.95010
1000 +: $ 3.86694
10000 +: $ 3.74220
Stock 963Can Ship Immediately
$ 4.16
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 122nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 145 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHP24N65E-E3 is a single N-channel enhancement mode power MOSFET designed for operations up to 600V and an output current of 24A. Its low gate charge and low output capacitance make it an ideal choice for switching applications.

The MOSFET consists of an insulated gate attached to source, drain and body terminals. It works based on the phenomenon of electrostatic attraction and depletion of carriers in the depletion region. In an N-channel MOSFET, the source and drain are positively charged, while the body (or substrate) is negatively charged. The electric field generated by the charge depletion causes electrons to be "pulled" towards the gate, while holes are pushed away from it. When a voltage is applied to the gate, it creates an electric field between the source and drain terminals, allowing current to flow from source to drain. This is known as the "on" state.

The SIHP24N65E-E3 can be used in a variety of applications, including motor control, power conversion, and lighting systems. It is also suitable for use in high-current switching applications, and can be used as a high-efficiency, low-noise replacement for a bipolar transistor. In motor control applications, it can be used for speed control, such as in power drive systems. It can also be used in power conversion applications such as LED and LED lighting systems, or solar inverters.

The SIHP24N65E-E3 offers superior energy efficiency, low noise and ultra-low on-resistance (RDS-on). Its low turn-on and turn-off times also make it ideal for high switching frequency applications. Its low capacitance and fast switching times also make it suitable for high frequency power conversion applications.

The SIHP24N65E-E3 also features high thermal resistance, making it suitable for use in high temperature environments. Its package is also designed to provide maximum signal integrity. Additionally, its low gate charge makes it ideal for applications requiring fast switching times.

The SIHP24N65E-E3 is an ideal choice for a variety of applications requiring reliable and efficient performance. Its low cost and easy-to-install design make it a popular choice for many applications. Its superior energy efficiency and low noise make it a good choice for power conversion and lighting applications, while its high thermal resistance makes it suitable for high temperature environments. Its low gate charge and fast switching times also make it well suited for high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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