SIHP14N50D-E3

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A SIHP14N50D-E3 is an N-channel PowerMESH Enhanced HEXFET MOSFET semiconductor device suitable for power management applications. This device is specifically tailored to reduce on-state resistance while providing superior switching performance.

N-channel PowerMESH Enhanced HEXFET MOSFETs are specially designed power transistors with fast switching capabilities. These devices contain multiple cross-connected source mesh structures that interconnect the source region to reduce Ron and minimize switching losses. Such devices are versatile and can be used in a variety of applications, including power management, audio and video electronics, communications, and system solutions.

The SIHP14N50D-E3 offers improved performance and reduced device losses with its fast switching capabilities for higher efficiency conversions, allowing for smaller and more efficient power converters.

The SIHP14N50D-E3 can tolerate up to +/- 55 volts peak drain voltage and has an average on-state resistance (RDSon) of 14 ohms at 25 degrees Celsius. This device operates with a gate-source voltage between +/- 10 volts. Its maximum power dissipation is 37.4 watts, with a continuous drain current of 27 amps and single pulsed current of 90 amps. Its operating temperature range of –55℃ to +175℃ allows for use in various automotive and commercial applications.

The SIHP14N50D-E3 is widely used in load switch, power distribution and battery charging solutions, such as electric vehicles, telecom power supply, power distribution systems, server power solutions, and industrial automation. It is also well-suited for direct current (DC) to direct current (DC) conversion, both boost and buck, DC-DC voltage regulation, hard switching and soft switching circuit applications.

The working principle of the SIHP14N50D-E3 is based on its metal oxide semiconductor field effect transistor (MOSFET) technology. This device is an enhancement-mode MOSFET, meaning it is produced with a detached gate oxide film that acts as a capacitor. This also acts as an insulation dielectric. When an electrical charge is applied to the device’s gate, a strong electric field is generated at the gate which attracts electrons from the source region. These electrons form a conducting channel between the source and drain regions. This reduces the resistance between the source and drain terminals, allowing current to easily flow from the source to the drain.

In conclusion, the SIHP14N50D-E3 is a versatile and powerful enhancement mode MOSFET that offers improved performance and reduced device losses with its fast switching capabilities for higher efficiency conversions. It is suitable for various applications ranging from load switch, power distribution and battery charging solutions, to DC-DC voltage regulation, hard switching and soft switching circuit applications.

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