SIHP12N50C-E3 Allicdata Electronics
Allicdata Part #:

SIHP12N50C-E3-ND

Manufacturer Part#:

SIHP12N50C-E3

Price: $ 3.75
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 500V 12A TO-220AB
More Detail: N-Channel 500V 12A (Tc) 208W (Tc) Through Hole
DataSheet: SIHP12N50C-E3 datasheetSIHP12N50C-E3 Datasheet/PDF
Quantity: 629
1 +: $ 3.75000
10 +: $ 3.63750
100 +: $ 3.56250
1000 +: $ 3.48750
10000 +: $ 3.37500
Stock 629Can Ship Immediately
$ 3.75
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1375pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 555 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT) 
Description

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SIHP12N50C-E3 is a single, N-Channel field-effect transistor (FET) made by Infineon Technologies. This device offers low on-state resistance along with low Gate charge. It can operate with a drain current of up to 30A, making it suitable for a variety of high power applications. This article will discuss the application field and working principle of the SIHP12N50C-E3.

The SIHP12N50C-E3 is a powerful N-Channel device, and is typically used for switching applications such as high-side voltage regulators, power management systems, and DC-DC converters. It is also well-suited for applications such as motor controls, battery management, Lighting, and AC-DC converters. Furthermore, it is especially suitable for applications in which a low on-state resistance and a low gate charge are essential.

As with any switching device, the SIHP12N50C-E3 requires a gate drive signal to change its electrical characteristics. This gate drive signal is provided by the system microcontroller, digital signal processor, or other control circuit. The gate drive is usually provided by a low-side pre-driver MOSFET. The pre-driver MOSFET is activated when the microcontroller or other control circuit activates the pre-driver MOSFET’s gate. This, in turn, activates the SIHP12N50C-E3.

Once the SIHP12N50C-E3 has been activated, it can achieve a wide range of on-state resistance. This is due to the MOSFET’s body diode, which adds additional resistance to the overall resistance value. The difference between the on-state resistance when the transistor is activated, and the off-state resistance when the transistor is not activated, is called the Power On-state Resistance (RDSon).

The SIHP12N50C-E3 also has an impressive off-state resistance, meaning that it is able to block a large amount of current. The higher the off-state resistance, the more current can be blocked by the transistor, which is essential in many applications. Additionally, the SIHP12N50C-E3 also has a low gate charge, which is critical when switching high current loads, as it allows the gate to be quickly charged and discharged.

In addition to its impressive technical specifications, the SIHP12N50C-E3 also has multiple protection features that make it safe for use in high power applications. It is equipped with a current limit feature, which prevents the device from drawing more current than specified. In addition, it has an over-temperature protection feature which disables the device if it reaches a certain temperature. Additionally, it is also equipped with an over-voltage protection feature, which turns off the device if the gate voltage exceeds the specified voltage.

In conclusion, the SIHP12N50C-E3 is a very impressive N-Channel Field-Effect Transistor. It has low on-state resistance and low gate charge, making it a great choice for applications such as high-side voltage regulators and power management systems. Furthermore, it is equipped with multiple protection features which make it safe for use in high power applications. As such, it can be a great choice for designers who are looking for a powerful and reliable device for their high power applications.

The specific data is subject to PDF, and the above content is for reference

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