SIHP12N65E-GE3 Allicdata Electronics
Allicdata Part #:

SIHP12N65E-GE3-ND

Manufacturer Part#:

SIHP12N65E-GE3

Price: $ 1.89
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 650V 12A TO-220AB
More Detail: N-Channel 650V 12A (Tc) 156W (Tc) Through Hole TO-...
DataSheet: SIHP12N65E-GE3 datasheetSIHP12N65E-GE3 Datasheet/PDF
Quantity: 18
1 +: $ 1.89000
10 +: $ 1.83330
100 +: $ 1.79550
1000 +: $ 1.75770
10000 +: $ 1.70100
Stock 18Can Ship Immediately
$ 1.89
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 156W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 380 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The SIHP12N65E-GE3 is a (Insulated Gate Bipolar Transistor) IGBT based on ultra thin wafer technology. A voltage range of 12V, a current range of 65A, and a maximum voltage rating of 600V make the SIHP12N65E-GE3 a versatile and powerful device. This IGBT is most commonly used for applications requiring high power and high current density, such as motor control, renewable energy, lighting, welding, automotive, and consumer electronics.

Applications

One of the main applications for the SIHP12N65E-GE3 is motor control. This device is used in many systems to drive motors, often in applications where both high power and high speed are required. Examples include controlling fans, pumps, and drives, as well as controlling motor speed. This device is also used in renewable energy systems, to convert electrical energy into mechanical energy. The SIHP12N65E-GE3 can also be used in lighting applications to control dimming, as well as in welding applications to control AC and DC currents.

Working Principle

The SIHP12N65E-GE3 is an IGBT based on the principle of an insulated-gate transistor, which is a type of controlled-channel transistor. An IGBT consists of three pins, a source, a gate, and a drain. These pins can be connected to an external voltage source to create a voltage potential between the source and the gate. With this potential, the current will flow from the source to the drain, which is generally referred to as the "on" state. By reversing the voltage potential between the gate and the source, the current will stop flowing and the device will be in the "off" state.

The SIHP12N65E-GE3 IGBT is optimized for high power and high current density applications, with a voltage range of 12V and a continuous current rating of up to 65A. The device has a low Switching Loss (Sf) rating of 1.8mΩ, which means it is capable of switching large currents more efficiently. The SIHP12N65E-GE3I is protected against overvoltage and short-circuit conditions and comes with a wide range of gate drives, including PWM and current regulation.

Conclusion

The SIHP12N65E-GE3 is a powerful IGBT with a wide range of applications in motor control, renewable energy, lighting, welding, automotive, and consumer electronics. This device is optimized for high current applications, and its low Sf rating makes it efficient and reliable. With this, the SIHP12N65E-GE3 provides a great solution for high power and high current density applications.

The specific data is subject to PDF, and the above content is for reference

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