SIHP4N80E-GE3

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The SIHP4N80E-GE3 is a single N-channel power MOSFET designed with a Trench technology. It is especially suitable for commercial applications where high efficient switching and fast switching times are required. The device has an isolated mounting that allows it to be used in a variety of industrial, automotive and consumer applications.

The SIHP4N80E-GE3 has a small body size (17mm x 11mm), which makes it ideal for use in high-density circuit boards. It has a maximum drain source voltage of 800V and a maximum drain current of 17A, allowing it to handle large currents without overheating. It has a low power consumption with a maximum continuous drain current of 6A.

The SIHP4N80E-GE3 is an ideal choice for applications such as motor drive, lighting, and high-speed switching circuits. It has a low on resistance of 0.18Ω, which ensures minimal losses during switching and reduces power dissipation. It has a rugged SOA and temperature capabilities that enable it to function reliably in extreme temperatures.

The working principle of the SIHP4N80E-GE3 is based on the concept of an insulated gate field effect transistor (IG-FET). This type of field effect transistor uses an insulated gate to control the flow of electrons through the channel, which is formed between the source and the drain. The channel is part of the device and can be adjusted using a voltage to control the flow of electrons. As the voltage applied to the gate increases, the electrons will flow more quickly through the channel and the device will become more conductive. As the voltage decreases, the electrons will flow slower and the device will become less conductive.

The SIHP4N80E-GE3 is an excellent choice for applications where high efficient switching, fast switching times and a rugged construction are requirements. It is designed with a highly efficient Trench technology to maximize its performance and reduce losses. The device is suitable for use in a variety of industrial, automotive and consumer applications and has a small body size, which makes it ideal for use in high-density circuit boards.

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