SIHP25N40D-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SIHP25N40D-E3 is a metal oxide semiconductor field effect transistor (MOSFET) with a single P-Channel. A MOSFET is a type of FET (field-effect transistor) that utilizes a metal oxide layer as the gate insulator. It is also known as an unipolar transistor because it only has one-type of charge carrier. FETs, MOSFETs and bipolar transistors are the three main types of transistors, which are all used for switching or amplifying electronic signals. MOSFETs are known for their low on-resistance, low gate drive requirements, high transconductance, and low power consumption. The SIHP25N40D-E3 is specifically designed to be used in surface mount technology (SMT) applications. It is a high-performance MOSFET with low RDS(on), making it ideal for use in switching applications that require a low output impedance. The SIHP25N40D-E3 is also suitable for use in applications such as motor control, gate, and power supply switching. It can handle up to 40V and has a current rating of 25A. The SIHP25N40D-E3 is an N-Channel enhancement-mode MOSFET that operates at a drain-source voltage (VDS) of up to 40V and a drain current (ID) of 25A. It has a low on-resistance (RDS(on)) of 0.038Ω, making it ideal for use in switching applications that require a low output impedance. The SIHP25N40D-E3 is available in a small surface mount package and has a wide temperature range of -40°C to 150°C. The working principle of the SIHP25N40D-E3 is fairly simple. When a positive voltage is applied to the Gate of the FET, it creates an electric field in the P-type channel between SOURCE and DRAIN. This electric field, in turn, attracts charge carriers and creates a conductive channel across the channel. This increases the conductance of the device and allows it to handle a larger amount of current. Conversely, when a negative voltage is applied to the Gate, the electric field is reversed and the number of charge carriers decreases, thereby reducing the conductance of the device and allowing it to handle a smaller amount of current. The SIHP25N40D-E3 is a great choice for many applications, especially those that require high performance, low RDS(on) and a wide temperature range. Its low gate drive requirements and high transconductance mean it is suitable for use in motor control, gate, and power supply switching. Its small size and wide temperature range make it ideal for use in surface mount technology (SMT) applications. All of these features make the SIHP25N40D-E3 an excellent choice for many common switching applications.

The specific data is subject to PDF, and the above content is for reference