SIR864DP-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SIR864DP-T1-GE3CT-ND |
Manufacturer Part#: |
SIR864DP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 30V 40A PPAK 8SO |
More Detail: | N-Channel 30V 40A (Tc) 5W (Ta), 54W (Tc) Surface M... |
DataSheet: | SIR864DP-T1-GE3 Datasheet/PDF |
Quantity: | 3000 |
Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 54W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2460pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 65nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 3.6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Cut Tape (CT) |
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SIR864DP-T1-GE3 is a single field effect transistor (FET) device with a wide range of applications in electronics. It is a very popular and widely used device due to its versatile capabilities and reliable performance. The device is available in various packages and offers some interesting features such as a wide range of input and output impedances, low threshold voltage, and an adjustable gate voltage.
The SIR864DP-T1-GE3 is an N-channel MOSFET with a silicon dioxide (SiO2) gate oxide thickness of 0.6 nanometers (nm). It is rated for a drain-source breakdown voltage of 400 volts (V). The device has an on-resistance of 19.4 ohms for a gate-source voltage of 4.5 volts (Vgs) and a channel charge of 4.8 mC/cm2. It also has an input capacitance of 8.2 picofarads (pF) and a gate charge of 2.6 mC/cm2.
The SIR864DP-T1-GE3 is an ideal device for high-side switch applications where a simple on/off switching solution is required. It is a good choice for applications that require high-side load switching, such as industrial control circuits. The device has a low gate threshold voltage, which makes it suitable for driving high capacitance loads. Furthermore, the device has a low input capacitance, which allows it to switch at higher frequency with minimal switching loss.
In addition to high-side load switching, the SIR864DP-T1-GE3 can also be used for linear circuit applications and voltage-controlled oscillators. The device has an adjustable gate voltage and can be used for linear systems, where it can provide a linear control of the drain voltage. It can also be used as an oscillator, where it can provide a variable frequency signal with minimal fluctuations.
The working principle of the SIR864DP-T1-GE3 is relatively simple. When a voltage is applied to the gate of the FET, a depletion region forms in the area of the SiO2 gate oxide between the source and drain. This region blocks current from flowing between the source and drain, effectively switching the device off. By varying the applied gate voltage, the size of the depletion region can be adjusted and the device will switch between on and off states.
In conclusion, the SIR864DP-T1-GE3 is a versatile single FET device with a wide range of applications. It is an ideal device for high side switch applications and has an adjustable gate voltage, low drain-source breakdown voltage and low gate charge. The device also has a low input capacitance and a low threshold voltage, making it suitable for driving high capacitance loads. The working principle of the device is based on the formation of a depletion region in the SiO2 gate oxide, which allows for linear control of the drain voltage and can be used as an oscillator for generating a variable frequency signal.
The specific data is subject to PDF, and the above content is for reference
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