Allicdata Part #: | SIR876ADP-T1-GE3TR-ND |
Manufacturer Part#: |
SIR876ADP-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 40A PPAK SO-8 |
More Detail: | N-Channel 100V 40A (Tc) 5W (Ta), 62.5W (Tc) Surfac... |
DataSheet: | SIR876ADP-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Package / Case: | PowerPAK® SO-8 |
Supplier Device Package: | PowerPAK® SO-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 5W (Ta), 62.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1630pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 49nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 10.8 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SIR876ADP-T1-GE3, which belongs to the Transistors - FETs, MOSFETs - Single category, is a silicon field-effect transistor (FET) manufactured by Vishay Intertechnology. It is especially designed for high-current, high-frequency applications, measuring 4.5mm x 1.2mm and featuring extremely low drain-source on resistance of 0.31 Ω at –10V. With a typical voltage drop of 0.6V at a bias of –10V and 20A, this FET offers low power loss and maintains higher efficiency in power switching applications.
The principle of operation of FETs is different from that of conventional transistors. The SIR876ADP-T1-GE3 transistor is based on a particular type of FET known as an Enhancement-Mode Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). A MOSFET operates by controlling the flow of electrons between two regions in the transistor called the drain and the source. The third region in the transistor, known as the gate, is used to control whether electrons can move between the source and drain. By controlling the voltage at the gate, the amount of current flow between the drain and source can be controlled. This means that a MOSFET can be used to amplify a signal, such as in switching applications.
The SIR876ADP-T1-GE3 offers excellent performance in switching applications and is able to handle large currents with minimal power dissipation. This makes it an ideal choice for applications such as power switching, where high efficiency and low power loss is essential. Additionally, its low voltage drop, low gate threshold voltage, and high current handling capabilities make it a suitable choice for various other applications including motor control, industrial automation, and consumer products.
In conclusion, the SIR876ADP-T1-GE3 is an ideal choice for high-current, high-frequency applications such as power switching and motor control. Its low drain-source on resistance and low voltage drop make it effective at switching high currents with minimal power loss and dissipating more power. As a result, it can be used in a variety of different applications including consumer products, industrial automation and more.
The specific data is subject to PDF, and the above content is for reference
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