SIR826DP-T1-RE3

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The SIR826DP-T1-RE3 device is a single N-channel Enhancement-mode Field-Effect Transistor (FET) with a low-on resistance and robust short circuit withstand capability. It is a high performance device developed by ROHM Semiconductors, a Japanese multinational electronics manufacturing company, particularly for use in DC-DC converters, portable radios, and general purpose inverters. This device offers a mix of speed, power efficiency, package size, and low on-resistance for high current applications. It is ideal for use in compact switching applications and offers a low input capacitance so it does not require a large sink to dissipate the heat.

The SIR826DP-T1-RE3 offers a variety of features, such as an integrated Anti-Parallel FET. This allows it to use two FETs in the same package, which greatly simplifies the connection without increasing the space of the board. The device also features a sturdy and abrasion-resistant packaging that can withstand mechanical shock and temperature fluctuations in industrial and automotive applications. This is important in ensuring the system’s safety and reliability.

The SIR826DP-T1-RE3 has a wide working voltage range of 0.5 to 30 V. It also offers a fast response time, high switching frequency, and low on-resistance Rds(on) of only 9 mΩ in its standard package configuration. The device is packaged in an ultra-small 6-pin SOT-323 package, which allows for a more compact design when compared to other similarly sized transistors. This device has a drain current rating of up to 10 A and a rated continuous drain current of up to 0.105 A atTA=25°C.

The working principle of the SIR826DP-T1-RE3 is very simple. When a gate voltage is applied to the device, the source-drain flow path is opened and a current will flow through the gate and the source-drain path. This is the basic principle of FETs. It is also important to note that the voltage of the gate must be lower than the source and the drain in order for the device to operate correctly. When this occurs, the device is said to be in the on-state.

Furthermore, the SIR826DP-T1-RE3 is well suited for a variety of applications, including automotive switching, DC-DC converters, power management, and more. It is capable of operating in high-side, low-side, buck, and boost configurations. Additionally, the device is ideal for a number of DC-DC converters, such as single ended, full-bridge, and H-bridge configurations. Finally, the device’s low on-resistance and robust short circuit withstand capability makes it ideal for use in low voltage power delivery applications.

In conclusion, the SIR826DP-T1-RE3 is a high performance single N-Channel enhancement-mode FET with a low on-resistance and robust short circuit withstand capability. It offers a mix of speed, power efficiency, package size, and low on-resistance for high current applications and is particularly suitable for use in DC-DC converters, portable radios, and general purpose inverters. Furthermore, the device is well suited for a variety of applications, including automotive switching, DC-DC converters, power management, and more. It is packaged in a small, but durable 6-pin SOT-323 package, which allows for a more compact design when compared to other similarly sized transistors.

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