
Allicdata Part #: | SSM6J505NULFTR-ND |
Manufacturer Part#: |
SSM6J505NU,LF |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P CH 12V 12A UDFN6B |
More Detail: | P-Channel 12V 12A (Ta) 1.25W (Ta) Surface Mount 6-... |
DataSheet: | ![]() |
Quantity: | 15000 |
3000 +: | $ 0.12353 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-UDFNB (2x2) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.25W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2700pF @ 10V |
Vgs (Max): | ±6V |
Gate Charge (Qg) (Max) @ Vgs: | 37.6nC @ 4.5V |
Series: | U-MOSVI |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 4A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 12V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SSM6J505NU,LF is a single N-channel power metal-oxide-semiconductor field-effect transistor (MOSFET). It is made using an advanced trench process technology which provides superior RDS(ON) with very low gate charge. This N-channel MOSFET is designed for applications such as synchronous rectification in switch mode power supplies, DC-DC converters, and other high frequency power switching applications.
Features
- A wide range of RDS(ON) values
- Superior Gate Charge vs. RDS(ON)
- Fast switching
- Lead free/RoHS Compliant (Note 1)
- ESD protection
Applications
- Switched mode power supplies (SMPS)
- Synchronous Rectification
- DC-DC converters
Working Principle
The SSM6J505NU,LF is an N-channel MOSFET with a typical drain-source voltage (VDS) of 40V, a typical drain-source resistance (RDS(ON)) of 0.0051Ω, and a maximum drain current (ID) of 25A. Its Gate Threshold Voltage (VGS) is -0.6V, and its maximum power dissipation rating is 30W.
As with all MOSFETs, the SSM6J505NU,LF works by using an electric field to control the flow of current through the device. When the Gate Threshold Voltage (VGS) is applied, the electric field increases, thus allowing current to flow through the device. Conversely, when VGS is removed, the electric field is reduced and the device will not allow current to flow.
The SSM6J505NU,LF has several advantages over other types of field-effect transistors. First, it has very low gate charge, which makes it ideal for high-frequency applications. Second, it has a very low RDS(ON) value, meaning that it can handle higher power levels than similar FETs. Finally, the device has excellent ESD protection, making it reliable in a range of applications.
Conclusion
The SSM6J505NU,LF is a single N-channel power MOSFET designed for use in high-frequency power switching applications. It offers a wide range of RDS(ON) values, a low gate charge, fast switching, and excellent ESD protection. This device is ideal for a range of applications, including SMPS, synchronous rectification, and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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