ZXMN2A04DN8TA Allicdata Electronics

ZXMN2A04DN8TA Discrete Semiconductor Products

Allicdata Part #:

ZXMN2A04DN8TR-ND

Manufacturer Part#:

ZXMN2A04DN8TA

Price: $ 0.56
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 20V 5.9A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 20V 5.9A 1.8W Surf...
DataSheet: ZXMN2A04DN8TA datasheetZXMN2A04DN8TA Datasheet/PDF
Quantity: 1000
1 +: $ 0.56000
10 +: $ 0.54320
100 +: $ 0.53200
1000 +: $ 0.52080
10000 +: $ 0.50400
Stock 1000Can Ship Immediately
$ 0.56
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A
Rds On (Max) @ Id, Vgs: 25 mOhm @ 5.9A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 22.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 10V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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ZXMN2A04DN8TA is a general-purpose analog transistor array. It can be applied in a variety of applications, including switching and amplifier circuits. This array consists of a trio of double N-channel metal oxide semiconductor field effect transistors (MOSFETs). It is designed for use in low-voltage, low-current, low-power applications. This device provides precise switching at high speeds and low on-state resistance, making it suitable for a variety of applications, including analogue and digital circuitry.

The ZXMN2A04DN8TA is particularly useful for battery-operated and portable equipment. The low voltage requirement allows it to be used with a wide range of power supply options. The low on-state resistance of the MOSFETs also allows the device to switch signals with less power, which is ideal for portable applications. And because the power supply voltage is low, the device can operate in an extremely small footprint.

ZXMN2A04DN8TA is a monolithic transistor array composed of three double N-channel MOSFETs. This allows it to provide very high speed switching and low power dissipation. The on-state resistance of each transistor is very low, making it ideal for use in low power, low on-state resistance applications. The device also features an integral latch circuit that provides additional surge protection and ESD resistance.

The working principle of the ZXMN2A04DN8TA is simple. The device consists of three N-channel MOSFETs connected in parallel, with each transistor having its own gate and source pins. When a voltage is applied to the source pins, the transistors will open and current will flow between the drain and source pins. The amount of current that flows depends on the resistance of the transistors and the applied voltage. By controlling the voltage on the gate pin, you can control the drain-to-source current.

The device can be used to build simple switching circuits that can switch on and off. It can also be used to build amplifier circuits. In an amplifier circuit, the ZXMN2A04DN8TA is used to increase the output signal\'s strength without increasing the input voltage. This is accomplished by increasing the drain-to-source current when voltage is applied to the gate pin.

The ZXMN2A04DN8TA is a versatile device that can be used in a variety of applications. Its low voltage and low on-state resistance make it ideal for portable applications, while its integral latch circuit provides additional protection from surges and ESD. The device\'s simple operating principle makes it ideal for both analogue and digital circuits, and its fast switching speed makes it suitable for high-speed applications. By combining three double N-channel MOSFETs in a single package, the ZXMN2A04DN8TA provides superior performance at a very competitive cost.

The specific data is subject to PDF, and the above content is for reference

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