ZXMN2F30FHTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN2F30FHTR-ND |
Manufacturer Part#: |
ZXMN2F30FHTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 4.1A SOT23-3 |
More Detail: | N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount S... |
DataSheet: | ZXMN2F30FHTA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 4.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 45 mOhm @ 2.5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.8nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 452pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 960mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The ZXMN2F30FHTA is a type of Field-Effect Transistor (FET) that belongs to the MOSFET class of semiconductor devices. It is a single, monolithic device featuring high current-conducting capabilities and a low channel resistance. This FET is well suited for use in a wide range of applications due to its low on-state resistance, high breakdown voltage, and ruggedness. Due to these features, the ZXMN2F30FHTA is an ideal choice for use in high-efficiency and high-power applications.The ZXMN2F30FHTA is composed of two main components, a p-channel and an n-channel. The p-channel is composed of a source and a drain, both of which are connected to the substrate of the device. The source and drain are connected to the gate and a gate electrostatic field is created across the source and drain terminals. This helps regulate the flow of current through the device.The ZXMN2F30FHTA works by controlling the amount of current that flows through it by altering the conductivity of its p-channel. A strong electrical field is applied across the source and drain terminals of the p-channel and this alters its conductivity. By varying the voltage applied across the terminals, the conductivity can be altered and this changes the amount of current that flows through the FET.The ZXMN2F30FHTA has a wide variety of applications. It is used in multiple applications including power amplifiers, audio amplifiers, power supplies, switching power converters, battery charger controllers, and in linear and high-power RF amplifiers. Due to its ruggedness and its low channel resistance, the FET is also suitable for use in high-reliability applications such as instrumentation, aerospace, and medical equipment.In conclusion, the ZXMN2F30FHTA is a FET device with high current-conducting capabilities, low channel resistance, and robustness. Its versatility makes it an ideal choice for use in a variety of applications including power amplifiers, audio amplifiers, and linear RF amplifiers. Its wide range of applications, coupled with its ruggedness, make the ZXMN2F30FHTA a great device for use in high-reliability and high-power applications.
The specific data is subject to PDF, and the above content is for reference
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