ZXMN6A25DN8TA Allicdata Electronics

ZXMN6A25DN8TA Discrete Semiconductor Products

Allicdata Part #:

ZXMN6A25DN8TR-ND

Manufacturer Part#:

ZXMN6A25DN8TA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2N-CH 60V 3.8A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 3.8A 1.8W Surf...
DataSheet: ZXMN6A25DN8TA datasheetZXMN6A25DN8TA Datasheet/PDF
Quantity: 11000
Stock 11000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Rds On (Max) @ Id, Vgs: 50 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1063pF @ 30V
Power - Max: 1.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP
Description

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What is ZXMN6A25DN8TA?

ZXMN6A25DN8TA is a type of field-effect transistor (FET) array constructed from two N-type MOSFETs in a single package. It is designed for use in the design of power supplies and other switching applications.

Application Field

ZXMN6A25DN8TA is well-suited for AC/DC converters, DC/DC converters, limited power inverters and general power supplies for consumer and industrial applications. It is designed to operate up to +85℃ and provide a wide range of current and voltage capabilities. It is also suitable for various load switch applications.

Working Principle

The key principle behind the operation of ZXMN6A25DN8TA is the operation of field-effect transistors (FETs). FETs are semiconductors that act as switches, allowing current to flow through them when a gate voltage is applied. The ZXMN6A25DN8TA has two FETs in a single package, each with its own gate, source and drain connections. When the gate voltage is applied, it creates an electric field between the source and the drain which allows the current to flow freely.The ZXMN6A25DN8TA is designed with a variety of circuit protection features including thermal shutdown, over voltage protection, low reverse leakage current and low charge injection. These features improve the efficiency and reliability of the device in both switching and power supply applications.

Conclusion

ZXMN6A25DN8TA is an excellent choice for designs that require precise control of power. Its two N-type MOSFETs in a single package provide switching capabilities up to +85℃, with a wide range of current and voltage capabilities. Its various circuit protection features make it a reliable device in both switching and power supply applications.

The specific data is subject to PDF, and the above content is for reference

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