Allicdata Part #: | ZXMN2A03E6TC-ND |
Manufacturer Part#: |
ZXMN2A03E6TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 20V 3.7A SOT23-6 |
More Detail: | N-Channel 20V 3.7A (Ta) 1.1W (Ta) Surface Mount SO... |
DataSheet: | ZXMN2A03E6TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 55 mOhm @ 7.2A, 4.5V |
Vgs(th) (Max) @ Id: | 700mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.2nC @ 4.5V |
Vgs (Max): | ±12V |
Input Capacitance (Ciss) (Max) @ Vds: | 837pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 1.1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-6 |
Package / Case: | SOT-23-6 |
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ZXMN2A03E6TC application field and working principle
ZXMN2A03E6TC is a n-channel enhancement-mode field effect transistor (FET). It is specifically designed and tailored for low to medium power switching and low voltage driver applications over an extended temperature range of -55℃ to +150℃. This transistor is offered in a SOT23-3L package which is suitable for automatic insertion.
Application Field
, the ZXMN2A03E6TC is ideally suited for use in Battery Powered, Low voltage loads, DC-DC conversion, Power switching, Motor controls, general purpose switching, as well as low side load switch in DC & AC circuit.
Features
- High current handling capability
- High switching speed
- Low on-resistance
- Low capacitance
- Low gate thresh voltage
- Low power loss
- High input impedance
- High thermal rating
Working Principle
The ZXMN2A03E6TC is a field-effect transistor (FET) with an n-channel enhancement-mode. This type of transistor works by controlling the flow of current through a n-channel enhancement-mode with a gate voltage. The gate voltage controls the amount of current that is allowed to flow through the channel. This means that the FET can be used to control the flow of current in a circuit by adjusting the gate voltage.
When a voltage is applied to the gate it produces an electrical field that attracts electrons from the source to the drain. This creates a channel between the source and drain that allows current to flow from source to drain when the gate voltage is high enough. The resistance of the channel is determined by the width and length of the channel. The higher the gate voltage, the wider the channel and the lower the resistance.
This type of transistor is commonly used in a wide range of applications such as switching circuits, amplifiers, voltage regulators, and low side load switch in DC & AC circuits. It is also used in motor controls, low voltage loads, power switching, and DC-DC conversion. The ZXMN2A03E6TC offers a low on-resistance compared to other similar FETs. This combined with its low capacitance, high current handling capability and high thermal rating make it an ideal choice for low to medium power switching applications.
Conclusion
The ZXMN2A03E6TC is a n-channel enhancement-mode field-effect transistor (FET). It is specifically designed and tailored for low to medium power switching and low voltage driver applications over an extended temperature range. It offers a number of benefits such as high current handling capability, high switching speed, low on-resistance, low capacitance, low gate threshold voltage, low power loss, and high input impedance. This makes it an ideal choice for a wide range of applications such as switching circuits, amplifiers, voltage regulators, Low side load switch in DC & AC circuits, motor controls, low voltage loads, power switching, and DC-DC conversion.
The specific data is subject to PDF, and the above content is for reference
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