ZXMN6A08GQTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN6A08GQTADITR-ND |
Manufacturer Part#: |
ZXMN6A08GQTA |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60VSOT223 |
More Detail: | N-Channel 60V 3.8A (Ta) 2W (Ta) Surface Mount SOT-... |
DataSheet: | ZXMN6A08GQTA Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.29168 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 4.8A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 5.8nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 459pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
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In the electronic component field, ZXMN6A08GQTA is an FET or Field Effect Transistor. It is a single n-channel MOSFET which is used to provide better and more efficient power supply and signal control in various electronics applications. In modern technology, ZXMN6A08GQTA is used in many different products such as computing, audio systems and radio communications.
A Field Effect Transistor (FET) is a type of transistor that works in a completely different manner than the standard BJT transistor. FETs are unipolar devices because they rely on the field effect, which means they only need one kind of charge - the electrons. This makes FETs more complex than the BJT transistors, but also offers more opportunities for current control. ZXMN6A08GQTA is an example of a FET device used in many products today.
ZXMN6A08GQTA uses MOSFET or Metal Oxide Semiconductor FET technology to control current in various electronics applications. MOSFET technology enables fast switching and higher output control than traditional bipolar transistors. ZXMN6A08GQTA is designed to operate over a wide range of power supply (VDS) of 20V and Gate Threshold Voltage (VGS) of 4V, allowing rapid and precise switching of current. This makes it ideal for applications that need more control over current such as audio signal processing.
The main purpose of ZXMN6A08GQTA is to provide an efficient way of controlling current and signal flow in various electronics applications. By using a MOSFET transistor, ZXMN6A08GQTA is able to achieve a high frequency of operation, low on-state resistance (RDS) and low power consumption. This makes it ideal for applications that need a better balance between power regulation and signal processing.
The basic principle behind the working of ZXMN6A08GQTA is the same as other transistors. The transistor consists of a n-type source, drain and gate. The gate is used to control the current flow from source to drain by creating an electric field between the source and the drain. When a voltage is applied to the gate of the transistor, it causes a current flow through the transistor which is called the drain current or ID. This current can be controlled by varying the applied voltage.
The ZXMN6A08GQTA offers several advantages over traditional transistors such as high switching speed, superior output control, low resistance and low power consumption. It is also simpler to use than other transistors which makes it ideal for applications that require rapid and accurate switching. The device is mainly used in audio applications due to its excellent frequency response, low distortion and high signal to noise ratio. It is also used in radio communications and power supply applications to help regulate voltage and current more efficiently.
The specific data is subject to PDF, and the above content is for reference
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