Allicdata Part #: | ZXMN3A01FTC-ND |
Manufacturer Part#: |
ZXMN3A01FTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 1.8A SOT23-3 |
More Detail: | N-Channel 30V 1.8A (Ta) 625mW (Ta) Surface Mount S... |
DataSheet: | ZXMN3A01FTC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 1.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.9nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 625mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The ZXMN3A01FTC is a single N-channel ZETEX ZXTM MOSFET designed for use in mobile and automotive electronics. The ZXMN3A01FTC is ideal for use in applications such as power amplifiers, low noise amplifiers, switching, and general purpose driving. The ZXMN3A01FTC is a Plastic Molded Dual-Dielecric Isolated P-Channel MOSFET that offers low RDS(on), low EMI emissions, and fast switching speeds. The combined low capacitance and peak power rating make the ZXMN3A01FTC suitable for use in high-current switching applications such as power supplies.
The ZXMN3A01FTC is composed of an N-Channel MOSFET fabricated with ZETEX ZXTM technology. The ZXMN3A01FTC is designed to be used in applications such as power amplifiers, low noise amplifiers, switching, and general purpose driving. This device is ideal for use in applications requiring low RDS(on), low EMI emissions, and fast switching speeds.
The ZXMN3A01FTC works on a simple principle: it consists of two transistors that are connected to each other by a gate. When a voltage is applied to the gate, charge carriers (electrons or holes) in the semiconductor material will flow between the source and drain. This causes the current between these two points increases. The ZXMN3A01FTC allows the user to control the voltage between the source and drain by modulating the gate voltage. By modulating the gate voltage, the user can control the flow of charge carriers in the semiconductor material, thus controlling the amount of current that can flow between the source and drain. This is the working principle of the ZXMN3A01FTC.
The ZXMN3A01FTC is used in a variety of applications, including power amplifiers, low noise amplifiers, switching, and general purpose driving. This device is ideal for use in high-current switching applications such as power supplies, as it offers low RDS(on), low EMI emissions, and fast switching speeds. Additionally, the ZXMN3A01FTC can be used in DC motors and power electronics as it is designed to provide simple and efficient switching capabilities.
The ZXMN3A01FTC is also ideal for use in automotive electronics, due to its fast switching speed, low EMI emissions, and low RDS(on). This device is capable of providing the necessary power and signal conditioning required for automotive systems operating in extreme conditions. Furthermore, owing to its low power loss and fast switching capabilities, the ZXMN3A01FTC is suitable for use in battery operated devices, such as drones and wearables.
In conclusion, the ZXMN3A01FTC is a single N-channel MOSFET ideal for use in mobile and automotive applications. This device is composed of two transistors connected by a gate, and works on a simple principle: the gate voltage controls the current between the drain and the source. The ZXMN3A01FTC is suitable for use in power amplifiers, low noise amplifiers, switching, and general purpose driving, as well as in DC motors and power electronics, automotive systems, and battery operated devices. Its fast switching speed, low EMI emissions, and low RDS(on) make it a versatile and reliable choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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