ZXMN6A11ZTA Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	120 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	5.7nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	330pF @ 40V
FET Feature:	--
Power Dissipation (Max):	1.5W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-89-3
Package / Case:	TO-243AA

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ZXMN6A11ZTA is a single N-channel 3V enhancement mode MOSFET transistor. It is composed of a three-terminal gate, drain and source that is operated with a 5V gate signal. It is a high-frequency, low on-resistance, low-power transistor that can handle a high drain-source voltage and be used with voltage-controlled switches.The ZXMN6A11ZTA is mainly used for high-frequency switching applications, such as in audio amplifiers, HF input stages and gain stages. It can also be used in voltage amplifiers and in certain types of motor controllers. The transistor is preferred for audio amplifiers because it offers improved audio quality compared to other types of switching transistors.The ZXMN6A11ZTA features an internal ESD protection circuit, which prevents damage to the device due to external electrostatic discharge, and a robust THERMAL pad design which allows it to deliver superior performance under high-stress conditions. The drain current of the ZXMN6A11ZTA MOSFET is increased by raising the gate voltage, thus turning its output resistance to a low “on” resistance state, which allows more current to flow through the device. The device can be turned off by applying a voltage lower than the normal operating voltage.The ZXMN6A11ZTA MOSFET has an avalanche energy rating of 8mJ and an operating temperature range of -55°C to 175°C. It is one of the most efficient transistors available on the market, and is capable of delivering high performance with low power consumption.The ZXMN6A11ZTA is ideal for low-power switching and efficiently controlling the flow of voltage and current. Its high-speed switching capabilities make it ideal for applications that require switchings of multiple times per second. This makes it popular in motor controllers, audio amplifiers, and digital logic circuits.Some of the features of the ZXMN6A11ZTA include low on-resistance, good thermal stability, and a robust THERMAL pad design. Its low on-resistance is of particular benefit when it is used in switching applications, as it reduces power dissipation in the resistor. The device also has a high thermal stability, which allows it to be used in high-frequency circuits without fear of overheating. The robust THERMAL pad design helps to protect the device from excessive temperatures, helping to ensure that it performs reliably under any conditions.In conclusion, the ZXMN6A11ZTA is a single-channel MOSFET transistor that offers outstanding performance for high-frequency, low-power switching applications. Its low on-resistance, high thermal stability and robust THERMAL pad design all make it an ideal choice for applications that require frequent switching and efficient current and voltage control.

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