ZXMN10A09KTC Discrete Semiconductor Products

ZXMN10A09KTC Application Field and Working Principle

The ZXMN10A09KTC is a P-channel Enhancement Mode Field Effect Transistor (MOSFETs) manufactured by Zetex Semiconductors. It is designed to work in the low power range and at moderate frequencies using small signal. It features an overload protection device for overload protection and surge immunity. The ZXMN10A09KTC is also ideal for audio applications, power supplies, and motor control applications.

Features

The ZXMN10A09KTC has the following key features:

• Low On-state Resistance
• Extended Operating Temperature Range
• Low Gate Threshold Voltage
• High Input Impedance
• High Output Current
• Lead-Free and RoHS Compliant

Applications

The ZXMN10A09KTC can be used in the following applications:

• Audio Circuits
• Power Supplies and Voltage Regulators
• Motor Control Applications
• Photovoltaic Systems
• Telecom/Datacom Systems
• Robotics and Surveillance Systems

Working principle

The ZXMN10A09KTC is a MOSFET, meaning it is an insulated gate FET. It works by controlling the current that flows between the source terminal and the drain terminal. When a voltage is applied to the gate terminal, an electric field is created in the region between the source and drain. This electron field forms an electric channel across the region called the drain-source channel. This channel allows current to flow between the source and the drain when the gate voltage is greater than the threshold voltage, otherwise known as the pinch off voltage. The current that flows between the source and drain terminals is controlled by the amount of voltage applied to the gate terminal.

It is important to note that the ZXMN10A09KTC must be used with a gate drive voltage of 4 volts or less and requires a minimum gate voltage of 2 volts. When the gate voltage is higher than the recommended values, an increase in temperature and temperature distribution will occur, which could cause damage to the device. It is also important to note that during the production process, the leakage of the single MOSFET is controlled. Therefore, the leakage is kept to a minimum in order to ensure optimal performance.

Conclusion

The ZXMN10A09KTC is an ideal low power, moderate frequency MOSFET designed for audio applications, power supplies, and motor control applications. It features an overload protection device for overload protection and surge immunity. The ZXMN10A09KTC requires a gate drive voltage of 4 volts or less, and a minimum gate voltage of 2 volts. It features low on-state resistance, extended operating temperature range, low gate threshold voltage, high input impedance and high output current.