ZXMN3A01E6TA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN3A01E6TR-ND |
Manufacturer Part#: |
ZXMN3A01E6TA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 2.4A SOT-23-6 |
More Detail: | N-Channel 30V 2.4A (Ta) 1.1W (Ta) Surface Mount SO... |
DataSheet: | ZXMN3A01E6TA Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | SOT-23-6 |
Supplier Device Package: | SOT-23-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 3.9nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.4A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The ZXMN3A01E6TA, also known as a “single-gate n-channel enhancement-type MOSFET,” is a type of semiconductor device used in a range of electronic equipment. It’s made up of three layers of semiconductor material: an n-type body, the channel and the gate. This device is capable of both driving signals and amplifying them, depending on the voltage applied to the gate terminal.
The ZXMN3A01E6TA is used in a variety of applications, including amplifiers, digital logic, analog switches, power control, and DC-DC conversion. It’s particularly great as an amplifier due to its ability to operate at a high frequency. Additionally, it can easily be switched on or off using just a single voltage or current.
The working principle of the ZXMN3A01E6TA is relatively simple. When a positive voltage is applied to the gate, some electrons are allowed to pass through the channel, and the device is turned on. The higher the voltage applied to the gate, the less resistance will be present in the channel, resulting in higher current flow. Conversely, when the voltage to the gate is reduced to zero, the channel resistance will increase, and the device will turn off.
It’s important to note that the ZXMN3A01E6TA typically requires less-than-ideal operating conditions in order to function properly. For example, the power supply voltage must be kept within a certain range and the drain-source voltage must be kept within a specified range as well. Any deviations from these values can lead to unexpected behavior of the device.
In general, the ZXMN3A01E6TA is a great choice for applications that require fast switching or high-frequency operating conditions. Its low capacitance and good Gate-Source current transfer ratio make it an ideal choice for amplification and switching. Additionally, its low gate-source capacitance helps to reduce power consumption.
Overall, the ZXMN3A01E6TA is a well-rounded device that is suitable for a variety of applications. It’s versatile, reliable, and easy to use. Its low gate threshold voltage makes it an ideal choice for high-frequency applications and its low gate-source capacitance helps to reduce power consumption. With these benefits, the ZXMN3A01E6TA is sure to be a reliable choice for embedded systems and other applications.
The specific data is subject to PDF, and the above content is for reference
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