ZXMN6A08GQTC

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

ZXMN6A08GQTC is an N-Channel Enhancement Mode MOSFET that features a silicon gate structure. It draws its name from the Gate Oxide and MOSFET properties it comprises with an N-channel enhancement feature. The MOSFET is designed to work in operations requiring high voltage, current, power, and temperature ratings.

The ZXMN6A08GQTC is ideal for use in a wide range of applications including HVAC systems, power supplies, motor control, home appliances, and related PC board assemblies. It can be used in single-ended or dual-ended power supplies. The low on-state loss, low gate drive power, and internal electrostatic discharge (ESD) protection make this device especially suitable for fast switching applications.

The operating principles of the ZXMN6A08GQTC involve a four-terminal device (Source, Drain, Gate, and Body) that has semiconductor material between the Source and the Drain. This material is referred to as the channel. By applying a suitable voltage to the gate, holes and ionized atoms are attracted to the channel, which reduces the resistance and provides a controlled flow of electrons and electric current. The body terminal, also known as the substrate, is used to control the threshold voltage. This can be done manually with the addition of a series resistor, or automatically with the Gate/Body/Source control.

In addition to its wide range of applications, the ZXMN6A08GQTC is also characterized by low power consumption. Due to its low R_DS(on) of 6 mOhms, the device will dissipate very little power, resulting in improved system level efficiency. The minimum guaranteed breakdown voltage of 600V also provides additional system-level reliability.

Overall, the ZXMN6A08GQTC is an ideal MOSFET for a variety of applications. It offers high reliability, low power consumption, and wide range of uses from HVAC systems to PC board assemblies. With its four-terminal design and thermal performance, the device is sure to provide robust circuit protection and reliable operation in the toughest of applications.

The specific data is subject to PDF, and the above content is for reference