ZXMN3A04KTC Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN3A04KTCTR-ND |
Manufacturer Part#: |
ZXMN3A04KTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 30V 18.4A DPAK |
More Detail: | N-Channel 30V 12A (Ta) 2.15W (Ta) Surface Mount TO... |
DataSheet: | ZXMN3A04KTC Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.15W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1890pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 36.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tape & Reel (TR) |
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ZXMN3A04KTC is a small signal, N-Channel Enhancement Mode MOSFET transistor made by Diodes Incorporated. It is classified under Transistors - FETs, MOSFETs - Single. This MOSFET offers superior performance with fast switching speed, low drain-source on-resistance, and excellent reliability in applications such as low voltage DC motor control, low power audio/video switches, LED\'s drive, and various interface logic circuit switching.
The ZXMN3A04KTC can be used in both the DC and AC applications depending upon the size and amount of voltage or current. DC operations mainly involve switching low voltage signals (<50V) and are mainly used for low power applications such as switching relays, electronic circuits, driving motors, and powering audio/video devices. The AC operations mainly involve switching relatively high voltage signals (>50V) that are mainly used for high power applications such as relays, electric motors, and power switching.
The ZXMN3A04KTC is a single P-Channel Enhancement Mode MOSFET transistor that provides superior performance when compared to P-Channel Enhancement Mode MOSFET transistors of similar wattage. It features a very low on-resistance of just 0.076 ohms resulting in higher current conduction and faster switching speeds. It also features a low gate threshold voltage of 1.35V, low gate leakage current, and a maximum operating temperature of 150 degrees Celsius. The ZXMN3A04KTC is RoHS Compliant, meaning that it is safe for use in robust and demanding commercial electronic applications.
The gate of the ZXMN3A04KTC is controlled by a voltage or current signal. When a voltage or current is applied to the gate, it creates an electric field which causes the source and drain terminals to become connected and the field-effect transistor (FET) to be turned on. The voltage or current applied to control the gate determines the on-resistance of the FET and thus, its current conducting ability. The gate needs to be driven with sufficient drive current in order for the transistor to be turned on.
The ZXMN3A04KTC is a very versatile device that can be used in a wide range of applications. It is suitable for use in high side switch driver and opto-isolator circuits, low voltage DC motor control and high speed switching circuits. It is also capable of driving logic gates and LEDs, as well as a variety of other applications requiring low power switching and excellent heat dissipation. The device is designed for operation with a source or drain voltage of up to 50V and for currents up to 2A.
In conclusion, the ZXMN3A04KTC is a versatile N-channel Enhancement Mode MOSFET that provides excellent performance and reliability. It features low on-resistance, low gate leakage current, and a maximum operating temperature of 150 degrees Celsius. It is suitable for use in low voltage DC motor control and high speed switching circuits, as well as a variety of other applications. The device is RoHS compliant and can be used in robust and demanding commercial electronic applications.
The specific data is subject to PDF, and the above content is for reference
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