ZXMN3AMCTA Discrete Semiconductor Products |
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Allicdata Part #: | ZXMN3AMCTATR-ND |
Manufacturer Part#: |
ZXMN3AMCTA |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2N-CH 30V 2.9A DFN |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 2.9A 1.7W Surf... |
DataSheet: | ZXMN3AMCTA Datasheet/PDF |
Quantity: | 3000 |
3000 +: | $ 0.25662 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 2.9A |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 190pF @ 25V |
Power - Max: | 1.7W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WDFN Exposed Pad |
Supplier Device Package: | 8-DFN (3x2) |
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ZXMN3AMCTA Application Field and Working Principle
The ZXMN3AMCTA is a MOSFET array device, or MOSFETarr, which is commonly used in power switching applications, audio amplification, and low temperature applications. It is an N-channel MOSFET array with three channels, and operates at a wide range of temperatures, from -60°C to 125°C.
The ZXMN3AMCTA is an integrated circuit that consists of three metal-oxide semiconductor (MOSFET) transistors connected in a single package. Each MOSFET, or transistor, is configured in a single configuration, with a gate, source, and drain. The gate voltage is applied to the gate of the MOSFET, which opens the channel and allows charge carriers, or electrons, to flow from the source to the drain, or from the drain to the source.
The ZXMN3AMCTA contains power-handling and temperature-sensing capabilities which make it ideal for use in power-switching and audio-amplification applications, as well as for use in low-temperature applications. In power-switching applications, the ZXMN3AMCTA can be used to switch high currents or voltages and is rated for currents up to 20A and voltages up to 40V. In audio-amplification applications, the ZXMN3AMCTA can be used to provide amplification of signals, such as the input of a loudspeaker or microphone, or the output of an amplifier. In low-temperature applications, the ZXMN3AMCTA can be used to control circuit functions at temperatures below -60°C.
The ZXMN3AMCTA operates using the bulk charge injection (BCI) mode, in which the applied gate voltage causes a charge to be injected into the channel. The injected charge moves along the channel and the resulting charge imbalance generates an electric field on the channel surfaces which, in turn, produces the drain-to-source voltage, or Vds. As the applied gate voltage is increased, the field is increased, resulting in higher Vds, or higher drain-to-source current, which is what a MOSFET is most commonly used for in power-switching applications. The drain-to-source voltage, or Vds, is used to control the switch, essentially allowing a user to turn the switch on or off quickly.
The ZXMN3AMCTA also has a strong body-effect, which can be used in audio-amplification and low-temperature applications. The body-effect is a change in the voltage across the channels of the device as the temperature of the device increases or decreases. By exploiting this effect, the device can be used to amplify signals or to control circuit functions such as transistors in low-temperature applications.
The ZXMN3AMCTA is a reliable and versatile MOSFET array with a wide range of applications in power-switching, audio-amplification, and low-temperature applications. Its ability to control circuit functions at low temperatures, coupled with its power-handling and temperature-sensing capabilities make it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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